产品种类 MOSFET RoHS 是 安装风格 Through Hole 封装/ 箱体 TO-247-3 通道数量 1 Channel 晶体管极性 N-Channel Vds-漏源极击穿电压 500 V Id-连续漏极电流 20 A Rds On-漏源导通电阻 270 mOhms Vgs - 栅极-源极电压 20 V Vgs th-栅源极阈值电压 4 V Qg-栅极电荷 210 nC 最小...
An assessment of the impact of back gate misalignment on the rf performance of a 25 nm gate length planar double gate MOSFET indicates that a ... A Kranti,GA Armstrong - 《Semiconductor Science & Technology》 被引量: 27发表: 2007年 Dopant-Free CMOS on SOI: Multi-Gate Si-Nanowire Transis...
PROBLEM TO BE SOLVED: To solve a problem in a method for manufacturing a super junction type power MOSFET having a drift region of super junction structure that, when a body region, etc. are introduced and thermal treatment related thereto is executed after forming a super junction structure ...
5930630Method for device ruggedness improvement and on-resistance reduction for power MOSFET achieved by novel source contact structure1999-07-27Hshieh et al.438/268 Primary Examiner: DANG, TRUNG Q Attorney, Agent or Firm: VA/LADAS & PARRY LLP (New York, NEW YORK, US) ...
Aggressive design of ultra-shallow junction for near-scaling-limit bulk planar CMOS by using raised source/drain extension structure and carbon Co-implantion... K Uejima,K Yako,T Yamamoto,... - IEEE 被引量: 0发表: 0年 Method of fabricating a raised source/drain MOSFET using self- aligned...
such as IC,resistor , capacitor , mosfet , diodes, module , LED, relay, lcd. pcb board . and so. the brand involves:SHARP, POWER, NS, ON, ST , IR, VISHAY , TOSHIBA, FAIRCHILD,MICROCHIP, ATMEL,EVERYLIGHT all the ...
In the recent development of MOSFET, non-planar structure has been identified as promising structure for next device generation. The advanced scaling of device implies that more sophisticated model is required due to the limitation of the existing models for application in nano scale. Analytical ...
Techniques are presented for calculating the drain current of small-geometry MOSFET's in the linear, subthreshold, and punch-through regions of device oper... JA Greenfield,RW Dutton - IEEE Journal of Solid-State Circuits 被引量: 206发表: 0年 Sub power plane to provide EMC filtering for VLSI...
channel structureIn this paper, a non-planar and non-rectangular MOSFET having asymmetrical channel structure has been modeled based on Schwartz-Christoffel transformation and electrical characteristics of the fabricated 3D MOSFET were measured.doi:10.1109/imnc.2003.1268637Hong-Kun Lyu...
Integrated JFET/MOSFET charge-sensitive amplifiers were made with JSD technology [54]. A simplified version of this process, featuring a different profile for the p-well, has been used for the fabrication of high-gain bipolar transistors [55], which eventually found a suitable application for ...