In this paper we discuss about different transistor devices like MESFET, MOSFET, FinFET, SOI-FinFET. We comparing all devices structures, drain current and voltage characteristics, operating speed, drain induced barrier lowering and delay. Through this analysis we get which device has better characte...
Figure 1. Planar MOSFET In a planar design, the gate controls in only one direction. In a 3D design, the gate wraps around the fin, providing control in two or three directions (Figure 2). Then, the gate regains control of the thin body. Figure 2. FinFET Furthermore, moving from pl...
nanosacle conventional planar MOSFETsnanowire FinFETsomega FinFETsperformancestatic noise marginIn this paper, we study the performance of SRAM cell with three different devices, conventional planar MOSFETs, omega FinFETs, and nanowire FinFETs. Static noise margin (SNM) of 6T SRAM is computational ...
MOSFETFinFETDouble-gateWe discuss a compact model for four-terminal double-gate (DG) MOSFETs based on double charge-sheet drift-diffusion transport, with carrier-velocity saturation. In this model, large V-Q at the saturation region is attributed to the infiltrated drain electric field. The ...