The fundamental mechanism for Phase-Change Memory was invented in the 1960s by Stanford Robert Ovshinsky. ST holds a license to the patents that resulted from that original development and has built onto that ground-breaking work for more than 15 years, developing the embedded PCM solution (ePCM...
The fundamental mechanism for Phase-Change Memory was invented in the 1960s by Stanford Robert Ovshinsky. ST holds a license to the patents that resulted from that original development and has built onto that ground-breaking work for more than 15 years, developing the embedded PCM solution (ePCM...
PCM( Phase-change Memory)也成为PRAM, PCRAM, Ovonic Unified Memory, Chalcogenide RAM和C-RAM。采用chalcogenide glass(硫系玻璃?)。存在两态:晶体态和非晶态。PCM可用于制造非易失性存储器,在未来会替代Flash。 PCM的材料特性 PCM的材料基础是硫系玻璃,,其特点是具有两态,晶体态为1,非晶体态为0。这种东西其实...
Parallel PCM Our P8P phase change memory (PCM) combines the best traits of traditional memory technologies into a single, nonvolatile device with a performance-boosting parallel interface. Ideal for high-end high performance embedded applications, second-generation P8P products increase performance, imp...
The fundamental mechanism for Phase-Change Memory was invented in the 1960s by Stanford Robert Ovshinsky. ST holds a license to the patents that resulted from that original development and has built onto that ground-breaking work for more than 15 years,
PCM结晶状态相变材料非易失性可扩展性电阻率Phase change memory (PCM) is a non-volatile solid-state memory technology based on the large resistivity contrast between the amorphous and crystalline states in phase change materials. We present the physics behind this large resistivity contrast and describe...
PhaseChangeMemory（PCM）调研报告 Phase Change Memory(PCM)调研 相变存储器(Phase Change Memory)或相变化存储器，一个非挥发性计算机存储器，也被称为PRAM、PCM 和PCRAM，是一种新颖且前景看好的技术。PRAM 使用具有独特行为的硫化玻璃，当给予特定应用的热能，可以使它在结晶和无定形两个状态之间切换。最近的技术...
相变存储器(Phase-Change Memory)是计算机体系结构中的下一代内存技术,具有高密度、低功耗、非易失等优点,具备替代现有… d.wanfangdata.com.cn|基于57个网页 2. 相变化记忆体 此技术称为相变化记忆体(phase-change memory),简称 PCM 记忆体,可取代快闪记忆体,快闪记忆体在移动设备尚的使用 … ...
最近阅读computer杂志2009年11月刊extreme-scale计算专辑,提到PCM(phasechangememory,相变化内存),感到这是一个对解决当前计算机功耗墙、存储墙以及扩展性问题..
Phase-Change Memory(PCM) is one of the most recent technologies to enter the embedded memory market for consumer- and automotive-grade applications. However, conventional PCM materials cannot be used for certain applications due to the severe temperature constraints of the soldering specifications requir...