A phase-change memory device includes: a unit cell including a phase-change resistor; a sense amplifier applying a sensing current to the phase-change resistor; and a switching unit operating in a standby mode or a read mode according to a global line signal and controlling passing presence ...
A phase-change memory device has a plurality of first wiring lines WL extending in parallel to each other, a plurality of second wiring lines BL which are disposed to cross the first wiring lines WL while being separated or isolated therefrom, and memory cells MC which are disposed at respect...
This invention discloses a phase-change memory device that can improve current characteristics of the transistors obtain Bi. The invention disclosed is a semiconductor substrate having a device isolation film for isolation between elements; An active region formed on the remaining area other than the ...
a second memory block having a plurality of phase-change memory cells each connected between each of the plurality of bit lines and a second word line, and first and second pull-down transistors pulling-down each voltage level of the first and the second word lines and sharing a node and ...
Phase-change memory devices are currently well-positioned to be used in the exploration of neuromorphic and memcomputing applications owing to the multi-level storage capability, proven large-scale manufacturability and good understanding we have of the underlying physical mechanisms and state dynamics11....
A method for fabricating a phase change memory device including memory cells includes patterning a via to a contact surface of a substrate corresponding to each of an array of conductive contacts to be connected to access circuitry, lining each via with a conformal conductive seed layer to the ...
Provided are a phase-change memory device using insulating nanoparticles, a flexible phase-change memory device and a method for manufacturing the same. The phase-change memory device includes an electrode, and a phase-change layer in which a phase change occurs depending on heat generated from th...
Phase change memory devices and methods of making phase changeable memory devices including a heating electrode disposed on a substrate are provided. The heating electrode includes an electrode hole in the heating electrode. A phase chan... 鄭 元 哲,金 亨 俊,朴哉▲げん▼,... 被引量: 0发表...
A memory cell device is provided which includes a substrate, a plurality of unit memory cells connected between a word line and respective bit lines, where each memory cell including a resistance variable element, such a phase-change element, and a diode connected in series between the word lin...
Phase-change memory device and methods for forming the same. The phase-change memory device comprises a first electrode and at least one phase-change material layer formed over the first electrode. The at least one phase-change material layer further comprising at least one implanted region that ...