About Phase Change Memory Memory architecture can be a challenge—density, performance, packaging, and interfaces all affect system-level performance. Phase change memory (PCM) is a groundbreaking class of memory that delivers an unparalleled combination of performance and efficiency for your design. ...
The fundamental mechanism for Phase-Change Memory was invented in the 1960s by Stanford Robert Ovshinsky. ST holds a license to the patents that resulted from that original development and has built onto that ground-breaking work for more than 15 years,
PHASE CHANGE MEMORY 优质文献 相似文献 参考文献 引证文献Pipe shaped phase change memory A memory cell device includes a bottom electrode, pipe shaped member comprising phase change material and a top electrode in contact with the pipe-shaped member. An electrically and thermally insulating material is...
A phase change memory device with a memory element including a basis phase change material, such as a chalcogenide, and one or more additives, where the additive or additives have a non-constant concentration profile along an inter-electrode current path through a memory element. The use of "...
Phase Change Memory : Status and Challenges to Navigate an Increasingly Competitive Memory LandscapeDennison, Chuck
相变存储器 Phase-Change Memory (PCM),(嵌入式内存技术正处于十字路口。在FD-SOI和FinFET高级CMOS技术中,传统浮栅嵌入式非易失性存储器(eNVM)的集成在28nm和更小的硅
Memory Devices, Nonvolatile G.Baccarani,E.Gnani, inEncyclopedia of Condensed Matter Physics, 2005 Phase-Change Memory Phase-change memories (PCMs) are based on the peculiar properties ofchalcogenidematerials, that is, compounds based on sulfur, selenium, or tellurium, such as GeSe, AsS, GeAsTe,...
Phase change memory is based on the idea of taking advantage of behavior of chalcogenide glass, which can assume crystalline and amorphous states, depending on the temperature. Gradual cooling results in a crystalline state of the material and abrupt cooling quenches the phase change material into ...
A phase change memory (PCM) is provided which includes a substrate, a plurality of bottom electrodes, a plurality of top electrodes, a plurality of phase change materials, and a plu
An integrated circuit phase change memory can be pre-coded by inducing a first resistance state in some cells and the memory, and a second resistance state and some other cells in t