pn结电容(p-njunctioncapacitance) pn结电容(p-njunctioncapacitance) pn结具有电容特性。pn结电容包括势垒电容和扩散电容两部分。pn结的耗尽层宽度随加在pn结上的电压而改变。当pn结加正向偏压时,势垒区宽度变窄、空间电荷数量减少,相当于一部分电子和空穴存入势垒区。正向偏压减小时,势垒区宽度增加,空间电荷数量增多,这...
has been measured for a variety of alloyed p-n junction diodes made in two ways : normally, so that the substrate was the weakly doped side of the junction ; and abnormally, so that the alloyed aide of the junction was the more weakly doped.Junction capacitance measurements indicate that th...
M. Smits "Potential distribution and capacitance of graded p-n junctions", Bell Syst. Tech. J. , vol. 39, pp.1573 -1602 1960Morgan S P ,Smits F M. Potential distribution and capaci2 tance of a graded p - n junction [J ] . Bell Syst Techn J , 1960 ,39 :1573～...
A comprehensive analytical model for the quasi-static capacitance of the space-charge region of p-n junction devices is presented. It describes the capacitance for all voltages, including voltages large enough to cause the junction barrier to vanish. The model applies for exponential-constant doping...
The computer solutions are used to calculate the voltage dependence of the stored charge (low-frequency ac capacitance) of a graded junction numerically, as a function of the bias voltage across the junction. The expression for the capacitance is split into two parts, one of which dominates in...
The computer solutions are used to calculate the voltage dependence of the stored charge (low-frequency ac capacitance) of a graded junction numerically, as a function of the bias voltage across the junction. The expression for the capacitance is split into two parts, one of which dominates in...
Theoretical calculations of Debye length, built-in potential and depletion layer width versus dopant density in a heavily doped p- n junction diode Theoretical calculations of Debye length, built-in potential, depletion layer width and capacitance as a function of dopant density in a heavily doped ...
EFFECTS OF DEEP SMALL-SIGNAL ON n ’ p JUNCTION REVERSE-BIASED CAPACITANCE *Schibli, EMilnes, A G
Figure5:GateChargeCharacteristicsFigure6:CapacitanceCharacteristics 4 AP10G02LI 20VN+P-ChannelEnhancementModeMOSFET 司 公 限 有司 技公 科限 丰 Figure7:NormalizedBreakdownVoltagevs.Figure8:NormalizedonResistancevs 锐有 JunctionTemperatureJunctionTemperature ...
This paper describes the effect of 24 MeV proton irradiation on the electrical characteristics of a pnp bipolar junction transistor 2N 2905A. I-V, C-V and... KV Madhu,SR Kulkarni,R Damle - 《Pramana Journal of Physics》 被引量: 9发表: 2010年 Capacitance Spectroscopy Study of High Energy...