pn结电容(p-njunctioncapacitance) pn结具有电容特性。pn结电容包括势垒电容和扩散电容两部分。pn结的耗尽层宽度随加在pn结上的电压而改变。当pn结加正向偏压时,势垒区宽度变窄、空间电荷数量减少,相当于一部分电子和空穴存入势垒区。正向偏压减小时,势垒区宽度增加,空间电荷数量增多,这相当于一部分电子和空穴的取出。对于...
光电容量发光二极管PN结半导体光电设备半导体硅1IntroductionWiththedevelopmentofpurificationandgrowthofsiliconmaterial,especialy,thedevelopmentofhighlypureSiH4,thepurityofh...半导体光子学与技术(英文版)CHEN Jie Hangzhou Institute of Appl. Eng. Tech.,Hangzhou ,CHN...
Since we have a separation of positive and negative charges in the depletion region,a capacitance is associated with the pn junction. Fig.8.3 shows the charge densities in the depletion region for applied reverse-bias voltages of VR and VR+dVR. An increase in the reverse-bias voltage VR will...
1.Trench capacitors based on semiconductor pn junction capacitance利用半导体pn结结电容构成的沟道式电容器 2.Substitution Measurement of Junction Capacitance of PIN Photodiode and Regression Analysis;PIN管结电容的代换测量与回归分析 3.The measurement results for Hg Cd Te photodiodes are presented.文中列出了...
5) PN junction electric field PN结边界电场 1. A novel analytic model on the relationship about the surface voltage and the PN junction electric field with the ion dose in the drift of gate off MOS is presented. 本文提出了偏置栅MOS管漂移区离子注入剂量对表面电压和PN结边界电场两者关系的一种...
PN-diodecapacitance ,IntroductionoPositivechargeofjunction: ,ND+–positivedonorchargesinthe(non-neutral)depletionregion(immobilecharge) ,p–holesinjectedintotheneutraln-typeregion(minoritycarrierinjection) oNegativechargesofjunction ,NA––acceptorcharges,n–electrons ...
A varicap diode is a product that utilizes depletion layer capacitance characteristics generated when reverse voltage is applied to a PN junction. The depletion layer works as a gap between electrodes. Capacity varies as the depletion layer changes accor
10.Trench capacitors based on semiconductor pn junction capacitance利用半导体pn结结电容构成的沟道式电容器 11.non-polarity solid tantalum electrolytic capacitor无极性固体钽电解电容器 12.Study on Working Electrolyte of High-Voltage Wet Tantalum Capacitor;高压液体钽电容器工作电解质的研究 ...
A varicap diode is a product that utilizes depletion layer capacitance characteristics generated when reverse voltage is applied to a PN junction. The depletion layer works as a gap between electrodes. Capacity varies as the depletion layer changes accor
being connected in parallel with each other, and wherein said pn-junction Zener diode forms a by-pass for the noise signal components which are generated from said pn-junction capacitance element by breakdown thereof, wherein said capacitance circuit is fabricated as a semiconductor integrated ...