pn结电容(p-njunctioncapacitance) pn结具有电容特性。pn结电容包括势垒电容和扩散电容两部分。pn结的耗尽层宽度随加在pn结上的电压而改变。当pn结加正向偏压时,势垒区宽度变窄、空间电荷数量减少,相当于一部分电子和空穴存入势垒区。正向偏压减小时,势垒区宽度增加,空间电荷数量增多,这相当于一部分电子和空穴的取出。对于...
1、pn结电容(p-njunctioncapacitance)物理知识大全苏霍姆林斯基说:让学生变得聪明的办法,不是补课,不是增加作业量,而是阅读、阅读、再阅读。学生知识的获取、能力的提高、思想的启迪、情感的熏陶、品质的铸就很大程度上来源于阅读。我们应该重视它,欢迎阅读pn结电容(p-njunctioncapacitance)物理知识大全。pn结电容(p-n...
光电容量发光二极管PN结半导体光电设备半导体硅1IntroductionWiththedevelopmentofpurificationandgrowthofsiliconmaterial,especialy,thedevelopmentofhighlypureSiH4,thepurityofh...半导体光子学与技术(英文版)CHEN Jie Hangzhou Institute of Appl. Eng. Tech.,Hangzhou ,CHN...
题目This is due to___that there exists a capacitance___the PN junction. [或更简洁的一个句型:… due to the existence of a capacitance across the PN junction.] 相关知识点: 试题来源: 解析 the fact across 反馈 收藏
1.A direct current electrical source was used to charge the junction capacitance of light-emitt.利用直流电源对发光二极管(LED)的结电容充电,切断直流电源后对LED的电压-时间特性进行测量。 2.The spectral response,quantum efficiency,and junction capacitance were calculated,and the crosstalk between two bands...
Theory and experiments on open circuit voltage decay of p‐n junction diodes with arbitrary base width, including the effects of built‐in drif... C. Jain, "Theory and experiments on open circuit voltage decay of p-n junctions diodes with arbitrary base width, including the effects of built...
PN junction barrier capacitance measurement, TTL gates of the performance test DC 翻译结果2复制译文编辑译文朗读译文返回顶部 Measurement of capacitance of the PN junction barrier, TTL for DC gate circuit performance test 翻译结果3复制译文编辑译文朗读译文返回顶部 Measurement of capacitance of the PN junc...
" Capacitance diode".A capacitance diode having an epitaxial layer of a first conductivity type provided on a substrate in which a doping profile is formed by controlled doping during the growth, and a surface zone of the second con- ductivity type which forms a p-n junction with the epitax...
A varicap diode is a product that utilizes depletion layer capacitance characteristics generated when reverse voltage is applied to a PN junction. The depletion layer works as a gap between electrodes. Capacity varies as the depletion layer changes accor
Interdigitated pn junction device with novel capacitance/voltage characteristic, ultralow capacitance and low punch-through voltage The first demonstration of the recently disclosed channelling diode is reported. The structure combines important and unique features which can be used for... Capasso,F.,...