p-n junctionspace charge spectrainterface electron statesA detailed analysis of the temperature dependence of the small signal capacitance of reverse biased pn or metal-semiconductor junctions contains information on shallow and medium deep levels. It is argued that a simple C(T) measurement gives ...
The amount of junction capacitance is a function of applied terminal voltages Junction Capacitances All junctions are assumed to be abrupt. Given that the depletion thickness is xd we can compute the depletion capacitance of a reverse biased abrupt pn-junction. Where NA and ND are the n-type ...
A varicap diode is a product that utilizes depletion layer capacitance characteristics generated when reverse voltage is applied to a PN junction. The depletion layer works as a gap between electrodes. Capacity varies as the depletion layer changes accor
EFFECTS OF DEEP SMALL-SIGNAL ON n ’ p JUNCTION REVERSE-BIASED CAPACITANCE *Schibli, EMilnes, A G
When this junction is reverse biased, it electrically isolates one device from another on the chip. However, this device structure also forms parasitic lateral NPN transistors (see Figure A2). The P substrate is the base, the N-epi region is the emitter and the collector is any other N-...
of the electronic systems. From FIG. 3, we have CIO=C2//(C1+CZ). CIOis typically measured from I/O to GND under a positive voltage bias from 0V to VDD(e.g., 0V-5V). Under such biasing condition, C2and CZare mainly reverse biased PN junction capacitance that are relatively small...
signal capacitance of a reverse biased if GaP/Zn,O/p-n junction is analysed in detail at several temperatures. It is shown that the frequency dispersion itself is less appropriate for the accurate determination of the relevant parameters of the dopants (Zn,Te). On the other hand, one ...
G. Milnes, Effects of deep impurities on n+p junction reverse-biased small- signal capacitance, Solid-State Electronics, 11 (1968) 323-334.E. Schibli and A.G. Milnes. Effects of deep impurities on n+p junction reverse- biased small-signal capacitance. Solid-State Electron., 11:323-334,...
For evaluation of capacitance-voltage measurements on an abrupt pn semiconductor junction with reverse-biased depletion layer an approximation equation for the quantity U e is presented, where U e is the value at the intercept of the extrapolated plot C -2 to the applied voltage axis. The ...
When the MIS capacitor element is reverse biased, majority carriers (34) of the the second semiconductor layer (26) are supplied to a depletion layer (33) generated in the first semiconductor layer (24), thereby providing an MIS capacitor having an approximately constant capacitance even if it ...