By evaluating the diffusion currents of electrons and holes across the junction, it can be shown that the current-voltage characteristic of the diode is given by (Eq. 21)I=qA[(Dp/Lp)pn+(Dn/Ln)np](eqV/kT−1) Equation 21 is called the diode equation, which describes the total current...
20、gles are of equal size,The equation,21,The distribution of electric field in the depletion region is shown below,22,3) Potential in the depletion layer,The potential in the junction is found by integrating the electrical field. In the p region, we have that yields We arbitrarily choose...
详细解释: 以下为句子列表: 英文: Discussion is made on photocurrent output,injection current output and zero current output for photoreceiving PN junction by means of I-V equation of photoreceiving PN junction.Further survey is carried out on physical elements of the injection photodetec ...
The current-voltage characteristic through a pn -junction is given by the typical diode equation: (3) as shown as the dark current curve in Figure 4. When the device is exposed to light, the additional carriers cause an increased current, recognized by an essentially parallel shift of the ...
Diode Current Based on the carrier injection description of current through a p-n junction, and the assumption that recombination can be neglected in the space-charge layer, the diode equation is derived, I=qA[DpLppn+DnLnnp](exp(qV/(kT))−1)=I0(exp(qV/(kT))−1)I=qA[DpLppn+DnL...
So junction current =Jen(0V) - Jep= 0 Forward Bias Barrier reduced toq(VB- Vf) Minority drift Jep unchanged (supply limit) Majority diffusion increase So junction currentJ=Jen(Vf) - Jep = Diode Equation Include holes Io= reverse saturation current NoteIo= A( Jep+ Jhn) consists of thedr...
Pn-junctionDelaminationBucklingEnergy release rateThis paper investigates the problem of delamination and buckling of thermoelectric pn-junctions, which have many potential civil and military applications including thermal protection systems in space industry. Based on the compatibility equations of deformation,...
6. pn Junction Diode General solution (1) 6. pn Junction Diode Similarly, Ideal diode equation (Shockley eq.) 6. pn Junction Diode Ideal diode equation (Shockley eq.) Examination of Results 6. pn Junction Diode Examination of Results ◆ Ideal I-V ...
(−4.5 V), the avalanche breakdown is activated. We calculated the multiplication factor of such layer-junction device, according to the equation\({{{\mathrm{M}}} = \frac{{I_{ph} - I_d}}{{I_{bg}}}\), whereIphrepresents the photocurrent,Idis the dark current andIbgdenotes the ...
when sections of n- and p-type material are brought in contact to form a PN junction, a diode is formed. Diodes have a number of interesting and useful properties that are due entirely to the nature of the PN junction.