因此这种因为掺杂而获得多余电子提供传导的半导体称为n型半导体(n-type semiconductor),n代表带负电荷的电子。 和施体相对的,受体原子进入半导体晶 35、格后,因为其价电子数目比半导体原子的价电子数量少,等效上会带来一个的空位,这个多出的空位即可视为电洞。受体掺杂后的半导体称为p型半导体(p-type ...
P型和N型半导体 (2).doc,PAGE PAGE 1 P型和N型半导体 如果杂质是周期表中第Ⅲ族中的一种元素──受主杂质,例如硼或铟,它们的价电子带都只有三个电子,并且它们传导带的最小能级低于第Ⅳ族元素的传导电子能级。因此电子能够更容易地由锗或硅的价电子带跃迁到硼或铟的传导带
: The conventional nitride semiconductor, on which P-type impurities only are doped, and the nitride semiconductor, on which P-type impurities and oxygen are simultaneously doped, are changed to low resistance P-type by annealing, and the comparison of this change is indicated in the diagram. ...
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High-performance n-type organic electrochemical transistors (OECTs) are essential for logic circuits and sensors. However, the performances of n-type OECTs lag far behind that of p-type ones. Conventional wisdom posits that the LUMO energy level dictates
Therefore it is simply easier to use SWCNTs as the p-type semiconductor in the solar cell. However, with the advances in n-type doping and air stabilities of the various doping methods recently published, SWCNTs may be viable in the organic photovoltaics arena. Of the n-type doping methods...
Most of the recently discovered layered materials such as MoS2 or MoSe2 are n-type, while few materials, such as phosphorene, which suffers from rapid oxidation, are p-type. To form devices such as p–n junctions and heterojunctions, new p-type mono-/few-layers are needed. Here, we repo...
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