Integrated Circuits: N-type and P-type transistors are combined to create CMOS (Complementary Metal-Oxide-Semiconductor) integrated circuits. N-type transistors are responsible for the "ON" state in CMOS logic gates, allowing current to flow. Digital Logic Gates: N-type semiconductors are essential...
The multiple non-silicon semiconductor material layers may further include one or more intervening layers separating the N-type from the P-type layers. The intervening layers may be at least partially sacrificial, for example to allow one or more of a gate, source, or drain to wrap completely...
Realizing high performance in both n-type and p-type materials is essential for designing efficient thermoelectric devices. However, the doping bottleneck is often encountered, i.e., only one type of conduction can be realized. As one example, p-type CdSb with high thermoelectric performance has...
p-Type Transparent Conducting Oxide/n-Type Semiconductor Heterojunctions for Efficient and Stable Solar Water Oxidation. 来自 ACS 喜欢 0 阅读量: 70 摘要: Achieving stable operation of photoanodes used as components of solar water splitting devices is critical to realizing the promise of this renewable...
< Topic > The SOI baseplate stress was applied to part at least, the silicon on insulator (SOI) offer the baseplate.Solutions The SOI baseplate (100) the channel territory (122) the field-effect transistor which it possesses (FET) the method of producing is offered to the semiconductor on ...
专利名称：III-V layers for N-type and P-type MOS source-drain contacts 发明人：Glenn A. Glass,Anand S. Murthy,Tahir Ghani 申请号：US14875167 申请日：20151005 公开号：US09397102B2 公开日：20160719 专利内容由知识产权出版社提供 专利附图：摘要：Techniques are disclosed for forming transistor ...
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Embodiments of the invention are in the field of semiconductor devices and, in particular, tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs. BACKGROUND For the past several decades, the scaling of features in integrated circuit...