A P-Type Semiconductor is a type of semiconducting material layer in a PV cell that attracts positive electrons when sunlight shines on it, creating a flow of free electrons towards the N-type semiconductor to generate an electrical current. ...
Overall, the Se-regulating Te oxidation provides a window to change the material compositions among TeO2 (p-type wide-bandgap semiconductor)19,20, TexSey (p-type semiconductor)21,22, and Te (p-type semimetal)16,17, and thus modify their corresponding physical/chemical properties in a wide ...
PURPOSE:To provide an electrode to be used for p-type semiconductor in a photoelectric transducing device by forming an oxidated Ir electrode on a base by means of reactive sputtering, wherein either metal Ir or oxidated Ir is used as a target in the oxygen gas. CONSTITUTION:In a vacuum ...
p type semiconductor p 型半导体p well diffusion p 阱形成扩散p well mask p 阱形成掩膜p+ guard ring p+ 型保护环pack 部件pack carrier television station 便携式电视发射机package 外壳package assembly 外壳组装package base 外壳基座package closure 管壳密封package header 外壳基座package inductance 管壳电感...
[20], most 2D semiconductors aren-type. In addition, the Fermi level pinning at the metal/2D semiconductor interface leads to a higher Schottky barrier for hole injection [21], which greatly hinders thep-type conduction in 2D semiconductors and their practical applications such as complementary ...
受体掺杂后的半导体称为p型半导体(p-type semiconductor),p代表带正电荷的电洞。 以一个硅的本质半导体来说明掺杂的影响。硅有四个价电子,常用于硅的掺杂物有三价与五价的元素。当只有三个价电子的三价元素如硼(boron)掺杂至硅半导体中时,硼扮演的即是受体的角色,掺杂了硼的硅半导体就是p型半导体。反过来说,...
p type semiconductor p 型半导体 p well diffusion p 阱形成扩散 p well mask p 阱形成掩膜 p+ guard ring p+ 型保护环 pack 部件 pack carrier television station 便携式电视发射机 package 外壳 package assembly 外壳组装 package base 外壳基座
1. A solar cell comprising a first electrode layer, a second electrode layer, a p-type semiconductor layer disposed between the first electrode layer and the second electrode layer, and a layer A disposed between the second electrode layer and the p-type semiconductor layer, wherein the layer...
ZnO is a semiconductor material with excellent performance, and the doping strategy for ZnO is classified into two types: n-type and p-type doping. For n-type doping, the dopant can induce crystal lattice strain along the polar c-axis of the ZnO crystal, increasing the piezoelectric ...
This work is an important progress in WBG semiconductor doping. It has strongly developed the non-equilibrium doping process that to lower the dopantEaby tuning the band edge of the host. Besides, it has found a good method to bury ...