A semiconductor device including a silicon-oxide-oxynitride-oxide-silicon structure and methods of forming the same are provided. Generally, the structure comprises: a tunnel oxide layer on a surface of a substrate including silicon; a multi-layer charge storing layer including an oxygen-rich, ...
ONOOxide/Nitride/Oxide ONOOrganization of News Ombudsmen ONOOeste-Noroeste(Spanish: West-Northwest) ONOOpen to New Opportunity ONOOstnordost(German; East-North-East) ONOOver N Out(gaming clan) ONOOntgiften, Neutraliseren en Ontwateren(Dutch: decontamination, neutralization, dehydration) ...
4.1 Si-NCs in oxide nitride oxide (ONO) stacks Silicon-nitride-based NVM technology (also referred to as “charge trapping”-CT-NVMs) is another approach utilizing discrete charge storage nodes. This class of NVMs has been proposed in the early 1980s and since then different memory cell archi...
United States Patent US10903342 Note: If you have problems viewing the PDF, please make sure you have the latest version ofAdobe Acrobat. Back to full text
United States Patent US9349824 Note: If you have problems viewing the PDF, please make sure you have the latest version ofAdobe Acrobat. Back to full text
A method for forming a non-volatile memory device, the method including forming an oxide-nitride-oxide (ONO) layer over a portion of a substrate, the ONO layer including a bottom oxide layer, a top oxide layer and a nitride layer intermediate the bottom and top oxide layers, and managing ...
Vacuum is formed in a channel, and an oxide-nitride-oxide combined... 肖德元,张汝京 被引量: 0发表: 2015年 Oxide sintered body and manufacturing method thereof, the target, and the transparent conductive film A target for sputtering which enables to attain high rate film-formation of a ...
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in MANOS Memory Structures.- Surface-State Density Evaluation Problems in MNOS Structures.- Dye-Sensitized Photodischarge of Metal-Dye-Oxide-Silicon (MDOS) ... M Aslam,P Balk - Springer-Verlag, 被引量: 90发表: 1981年 Nickel Nanocrystals Embedded in Metal-Alumina-Nitride-Oxide-Silicon Type Low...
There are other charge-storage-based memory cells that can replace the floating gate cell. Thepolysiliconfloating gate can be replaced with anitridefilm, in a structure known as SONOS, orsiliconoxide-nitride-oxide-silicon (Figure 11.15)[16].An advantage of nitride over polysilicon is that charge...