Inductively Coupled Plasma）设备，常用于蚀刻多种材料如氧化物（oxide）、氮化物（nitride）、多晶硅（poly...
4.1 Si-NCs in oxide nitride oxide (ONO) stacks Silicon-nitride-based NVM technology (also referred to as “charge trapping”-CT-NVMs) is another approach utilizing discrete charge storage nodes. This class of NVMs has been proposed in the early 1980s and since then different memory cell archi...
A semiconductor structure comprising a first semiconductor structure; a second semiconductor structure; and a silicon-nitride layer configured to bond the first semiconductor structure and second semiconductor structure together. The first semiconductor structure comprises a first wafer; a first dielectric ...
metalnitrideoxide semiconductor的意思是金属氮化物氧化物半导体。这是电子学领域的一个专业术语，用于描述一种具有特定结构的半导体材料。在这种材料中，金属、氮化物和氧化物被组合在一起，以形成具有特定电学性能的半导体器件。这种结构可能用于制造各种电子器件，如晶体管等。
Metalnitrideoxidesemiconductor memory是指金属氮化硅氧化硅半导体存储器。这是一种特殊的半导体存储器，其主要特点如下：结构特性：MNOS存储器以其独特的三层结构著称，即金属层、氮化硅层和氧化硅层，以及底层的半导体材料。这种结构赋予了MNOS存储器独特的电学性能。存储机制：MNOS存储器的存储机制依赖于电荷...
Oxide Coatings on Silicon Nitride by Displacement Reactionspenetrationmolten metalfabricate oxidesilica‐rich phaseyttria‐alumina phaseNo abstract prepared.doi:10.1002/9780470294703.ch41T. N. TiegsJ. B. CrowL. BawazerD. L. BarkerJohn Wiley & Sons, Inc....
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ALUMINUM NITRIDE OXIDE SILICIDE;aluminium nitride oxide silicide CBNumber: CB91479316 Molecular Formula: AlH3N2OSi2* Molecular Weight: 130.189158 MDL Number: MOL File: 51184-13-5.mol Last updated:2024-12-18 14:15:30 Request For Quotation
titanium-nitride-oxide information, including chemical properties, structure, melting point, boiling point, density, formula, molecular weight, uses, prices, suppliers, SDS and more, available at Chemicalbook.
Porous niobium nitride (p-NbN) was prepared by annealing Nb2O5 in an Ar/NH3 atmosphere (Fig. 6a) [108]; the conversion process is described in Equation (6). CV curves (Fig. 6c) demonstrate that the cathodic peaks appear at 1.56, 0.57, and 0.01 V, while the anodic peaks are located...