middle nitride layer, the sacrificial oxide layer and the barrier layer covering the source region and the shallow trench isolation structure; dry etching process is stopped at the light top trench isolation structure; removing the barrier layer; depositing a top oxide layer, thereby forming the ON...
常用于蚀刻多种材料如氧化物（oxide）、氮化物（nitride）、多晶硅（poly-Si）和金属。调整不同材料的蚀...
4.1 Si-NCs in oxide nitride oxide (ONO) stacks Silicon-nitride-based NVM technology (also referred to as “charge trapping”-CT-NVMs) is another approach utilizing discrete charge storage nodes. This class of NVMs has been proposed in the early 1980s and since then different memory cell archi...
电隔离方式:LOCOS工艺(热生长厚SiO); 氮氧化硅Siliconoxynitride 电隔离方式:LOCOS工艺(热生长厚SiO 2 ); 0.25 m工艺技术以下,用STI浅槽隔离技术。 氮氧化硅,Siliconoxynitride 氮化硅掩蔽氧化 Nitrideoxidationmask 鸟嘴区,Bird’sbeakregion 选择性氧化选择性氧化 Selectiveoxidation 垫氧化层 ...
Siliconoxynitride电隔离方式LOCOS工艺热生长厚SiO20.25m工艺技术以下用STI浅 槽隔离技术。氮氧化硅Siliconoxynitride氮化硅掩蔽氧化Nitrideoxidationmask鸟嘴区 Bird’sbeakregion选择性氧化选择性氧化Selectiveoxidation垫氧化层PadoxideSilicon dioxideLOCOS隔离12Siliconsubstrate隔离42氧化膜用途表面钝化4.2氧化膜用途表 ...
网络释义 1. 氮化物 ... nitride oxide reactor 氮化物 氧化物反应器nitride oxide structure氮化物氧化物结构 nitride passivation 氮化硅钝化 ... www.zftrans.com|基于17个网页
2.Nitride Barrier Deposition 接下来,通过化学气相沉积(CVD)方法沉积一层厚度约1,200Å左右的SiN。然后,将晶片在SC1溶液中清洗。 3.Hard Mask Deposition & Lithography 使用化学气相沉积(CVD)方法,在晶片表面沉积一层厚度为2,000Å的Amorphous Carbon(A-C)。然后在其上沉积一层厚度为500Å的底部防反射涂层(...
silicon nitride can be used astensile stresslinear to enhance thecarrier mobilityof N-channelMOSFETdevices[36,37]. Furthermore, silicon nitride has important applications innonvolatile memory(NVM) devices either in the floating gate–based or nitride-based charge-trapping memory devices, as shown inF...
titanium-nitride-oxide information, including chemical properties, structure, melting point, boiling point, density, formula, molecular weight, uses, prices, suppliers, SDS and more, available at Chemicalbook.
ALUMINUM NITRIDE OXIDE SILICIDE Synonyms ALUMINUM NITRIDE OXIDE SILICIDE;aluminium nitride oxide silicide CBNumber: CB91479316 Molecular Formula: AlH3N2OSi2* Molecular Weight: 130.189158 MDL Number: MOL File: 51184-13-5.mol Last updated:2024-12-18 14:15:30 ...