In this paper, we propose a technique to compensate the propagation delay and losses in VLSI interconnects by using negative group delay (NGD) active circuits. This study uses the RLC models of interconnect lines currently considered in VLSI circuits. The circuit proposed here is based on a ...
Rodder, Ferroelectric switching delay as cause of negative capacitance and the implications to NCFETs, in 2018 IEEE Symposium on VLSI Technology (Honolulu, HI, 2018), pp. 51–52. https://doi.org/10.1109/VLSIT.2018.8510628 B. Awadhiya, P.N. Kondekar, A.D. Meshram, Effect of ferroelectric...
wherein the locking signal generator includes a delay circuit receiving a read enable signal; and a read path which includes the local sense amp connecting to the local bit line pair, the global sense amp connecting to the local sense amp through the global bit line pair, wherein the read ...
Therefore, the maximum hole current Io(t) 64 generated in the source-to-barrier interface 14 and 18 exhibits a π/2 delay from the maximum ac voltage, which is typically known as the “π/2 avalanche delay.” Once the holes enter the drift region 22, the carrier transport mechanism ...
VLSI systems fabricated at nanoscale technology nodes are more vulnerable to various aging effects, such as transistor aging due to Negative Bias Temperature Instability (NBTI). The result is a transistor threshold voltage shift over time, which increases device delays causing more timing failures in ...
CMOS scaling is the approach to accomplish the VLSI goals in the past decades. The existing CMOS technology is facing challenges related to short channel effects and reached to its performance limits at sub-10 nm technology nodes. The negative capacitance field-effect transistor is a potential ...
low power VLSIAs a result of continuous scaling of transistors, negative bias temperature instability (NBTI) has become a serious reliability concern which causes the device to degrade over its lifetime. Similarly, leakage power also remains a key issue in deep submicron technologies. Both NBTI‐...
A trade-off between FM improvement and circuit delay penalty due to changed VDD can be stablished. The results show that the power consumption and NBTI-induced delay degradation are jointly reduced at some small delay penalty.Freddy ForeroAndres GomezVictor ChampacJournal of Low Power Electronics...
In this work, conventional D-flip flop is replaced by a new design using negative edge triggered D-flip flop. The proposed CSA is implemented in a faster partitioned Dadda multiplier and simulated by using MICROWIND tool. The results reveal that for 16 bit CSA improvement of power delay ...
In addition, considering the NC amplified gate capacitance, the intrinsic delay of 2D-NCFETs is still better than that of 2DFETs, especially for pass-transistor logic (PTL).Chia-Chen LinYi-Jui WuWei-Xiang YouPin Su会议论文