理想的掩埋界面设计,离不开对界面化学/电子特性的精准表征,这不仅起到连接界面性质与PEC性能的关键桥梁作用,也是指导材料改性与技术创新的重要依据。尽管X射线光电子能谱(XPS)作为表征表面特性的强大工具,其有限的探测深度(仅几纳米)限制了其在掩埋界面表征上的应用,尤其是对那些埋藏于表面之下数十纳米的界面。为此,...
研究者发现该Au/YIG/n-Si阻变器件表现出具有亚纳秒量级(~ 540 ps)的超快写入速度和高电阻开关比(~ 104)的单极性(Unipolar)电阻转变行为。不同电阻状态下YIG表面的X射线光电子能谱分析(XPS)证实氧空位在导电细丝形成中起到了重要作用...
原位XPS、原位XRD、原位Raman、原位FTIR 加急测试 王老师 198 2262 5523 www.micetech.cn
X-ray photoelectron spectroscopy (XPS) is a well known tool in studying the physical and chemical properties of surface/interfaces which provides the element specific, non-destructive and quantitative information. In the present study, information about the surface chemical states of interfacial ...
研究内容:研究者发现该Au/YIG/n-Si阻变器件表现出具有亚纳秒量级(~ 540 ps)的超快写入速度和高电阻开关比(~ 104)的单极性(Unipolar)电阻转变行为。不同电阻状态下YIG表面的X射线光电子能谱分析(XPS)证实氧空位在导电细丝形成中起到了重要作用。 文献信息:Ultrafast Multilevel Switching in Au/YIG/n-Si RRAM...
Toshihito OhtakeJournal of Surface Engineered Materials & Advanced TechnologyT. Ohtake, "ATR-FTIR and XPS evaluationof Alkyl immobiliza- tion by hydrosilylation on n-Si(111) for photoelectrochemical cell electrode," Journal of Surface Engineered Materials and Advanced Technology, vol. 3, no. 3, ...
Diamond-like carbon films were electrodeposited on n-Si substrate to realize an n-Si/DLC PV structure. The films thus obtained were characterized by FESEM, XPS, FTIR, and Raman studies. Solar cell ch...
本文采用 XPS 技术,对制备的无定型 Si-C-O-N 涂层进行了相关组成元素和结合状态的分析,为后续的研究工作奠定基础。1 实验Si-C-O-N 涂层采用上海有线电厂生产的型号为JG-PF-3B 射频磁控溅射仪来沉积。衬底和靶材分别采用市售的单面抛光的 RB SiC 陶瓷和自制的无压烧结的SiC 陶瓷, 尺寸分别为Ф38mm×3mm ...
采用射频磁控溅射法在RB SiC陶瓷基片上制备了无定型Si-C-O-N涂层,利用XPS分析了涂层的组成元素以及相应的结合状态.结果表明:离子轰击对Si,C和N的化学位移影响较大:经过离子轰击后Si-C和Si-N键所占比例上升,而Si-O键则稍有减少;C sp2有所上升,而C-Si键和C-N键则有所下降;N-Si键上升,而N-C键略有下降...
Fig. 7. XPS analysis of p-CuO/NiO-TX-100@n-Si (a) survey spectrum; (b) Cu2p spectrum; (c) Ni2p spectrum; and (d) O1s spectrum. Optical properties The UV-visible absorbance of spectra of deposited p-CuO@n-Si, p-NiO@n-Si, p-CuO/NiO@n-Si and p-CuO/NiO-TX-100@n-Si thi...