Find out more about our N Channel Power MOSFET Portfolio – Robust Design for High-Performance Industrial and Automotive Applications
Find out more about our N Channel Power MOSFET Portfolio – Robust Design for High-Performance Industrial and Automotive Applications
类型 分立半导体产品 晶体管 - FET,MOSFET - 型号 FDP18N50 技术参数 品牌: ON 型号: FDP18N50 封装: TO-220 批号: 21+ 数量: 14560 类别: 分立半导体产品 晶体管 - FET,MOSFET - 单个 制造商: onsemi 系列: UniFET™ FET 类型: N 通道 漏源电压(Vdss): 500 V 25°C 时电流 - 连续漏极 ...
40V N-Channel Power MOSFET VDSS 40V, ID 149A, low gate charge advanced Trench technology Silicongear-SG40N01P The SG40N01P uses advanced Trench technology and designs to provide excellent RDS(ON) with low gate charge. This ...
商品参数 品牌: on 封装: PQFN-8 批号: NEW 数量: 250000 制造商: ON Semiconductor 产品种类: MOSFET RoHS: 是 安装风格: SMD/SMT 封装/ 箱体: Power-56-8 晶体管极性: N-Channel 通道数量: 1 Channel Vds-漏源极击穿电压: 40 V Id-连续漏极电流: 25 A Rds On-漏源导通电阻...
20V N-Channel Power MOSFET Single Fetures Applications charge Capacitance SOT-523 Silicongear-SGN2030LVDSS , 20V RDS(ON) , 75(90)mΩ (max.) @ VGS=-4.5V RDS(ON) , 85(100)mΩ (max.) @ VGS=-2.5VRDS(ON) , 105(115)mΩ (ma...
Maximum power dissipation 500 250 可售卖地 全国 型号 VS320N10AU Features Enhancement mode Very Low on-resistanceRDS(on) Fast Switching and High efficiency 100% Avalanche test DS 100 V RDS(on),TYP@VGS=10 V 2.6 mΩ ID 320 A Part ID Package Type Marking Tape and reel...
NDF03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.6 W Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°...
MOSFET – N-Channel POWERTRENCH) 100 V, 39 A, 14.8 mW FDMS3662 Description This N−Channel MOSFET is produced using onsemi's advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max ...
1 N-Channel Power MOSFET 宽度 5.15 mm 商标 STMicroelectronics 下降时间 50 ns 产品类型 MOSFET 上升时间 25 ns 工厂包装数量 600 子类别 MOSFETs 典型关闭延迟时间 85 ns 典型接通延迟时间 13 ns 单位重量 38 g 可售卖地 全国 类型 Power MOSFET 型号 STW26NM60N 产品详情 技术参数 品牌: ST 型号: STW26...