英飞凌 MOSFET——功率 MOSFET 产品开发中的易用性 Share 易于使用和易于设计是客户要求的主要特性。英飞凌作为值得信赖的顾问,始终将客户的成功作为产品开发的核心。 英飞凌 MOSFETs——适用于各种设计条件的质量 Share 质量第一。英飞凌是功率半导体行业的领导者,长期以来一直致力于为客户提供安全的选择和可靠的性能。
N-channel dual-gate MOS-FETs PDFRev 2.1Dec 30, 2010430.0 KBBF1212_R_WREnglish Package Information plastic surface-mounted package; 4 leads PDFRev 1.0Feb 8, 2016230.1 KBSOT143BEnglish Packing Information Tape reel SMD; standard product orientation 12NC ending 215 PDFRev 1.0Nov 7, 2012191.4 ...
BF1206F 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gateMOSFETamplifiers with shared source and gate2 leads 原创声明:本文为恩智浦原创内容,未经书面授权,不得以任何方式加以使用。转载合作 基础器件 ...
Simulate ONLINE - Brushless DC (BLDC) Motor controlled by Sensorless Field-Oriented Control (FOC) using XMC1302 with MOSFET Inverter Opti... Infineon Read More ...MOS™ BSC0925ND and high-side and low-side Gate Driver IC IR2301. Infineon Designer is an online design- and prototyping engine...
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Feature(s) Low Gate Threshold Voltage Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant ...
MOSFET – Dual, N-Channel, Logic Level, POWERTRENCH) 30 V, 6 A, 28 mW FDS6912A General Description These N−Channel Logic Level MOSFETs are produced using onsemi's advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior...
AO4842 30V Dual N-Channel MOSFET General Description The AO4842 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. Product Summary VDS (V) = 30V ...
Dual N-Channel Enhancement Mode MOSFET TBL1012DW Features N-Channel switch with low RDS(on) Operated at low logic level gate drive HBM: AEC-Q101-001: H2 (JESD22-A114-B: 2) RoHS compliant with Halogen-free Qualified to AEC-Q101 Standards Typical Applications ...
Technology MOSFET (Metal Oxide) Configuration 2 N-Channel (Dual) FET Feature - Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 230mA Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id 2V @ 250...
HM8821Q Dual N-Channel MOSFET V(BR)DSS 20V RDS(on)MAX 0.007 Ω @ 4.5V 0.009 Ω @ 2.5V ID Max 15A FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package z ESD Rating:2000V HBM APPLICATION z Battery...