上述的效应可以用能带图(band diagram)来解释,。在能带图里横轴代表位置,纵轴则是能量。图中也有费米能 40、阶,半导体的本质费米能阶(intrinsic Fermi level)通常以Ei来表示。在解释半导体元件的行为时,能带图是非常有用的工具。 半导体材料的制造为了满足量产上的需求,半导体的电性必须是可预测并且稳定的,因此...
在P型半导体中,空穴(带正电)叫多数载流子;电子(带负电)叫少数载流子。如果在硅或锗等半导体材料中加入微量的磷、锑、砷等五价元素,就变成以电子导电为主的半导体,即N型半导体。在N型半导体中,电子(带负电)叫多数载流子;空穴(带正电)叫少数载流子。(2)在半导体热电偶中的应用热电制冷是热电效应主要是珀尔帖效应...
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numerical sorting 数字分类numerical tape 数字带numerical value 数值numerical word 数字字nyquist diagram 尼奎斯特线图信息英语词汇(N) 相关内容: 信息英语词汇(R) 信息英语词汇(Q) 信息英语词汇(P) 信息英语词汇(O) 信息英语词汇(M) 信息英语词汇(L) 信息英语词汇(K) 信息英语词汇(J) 科技英语词汇...
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37833 | DOI: 10.1038/srep37833 8 www.nature.com/scientificreports/ Figure 8. Schematic energy band diagram of the top surface and back surface (growth interface) of WS2 thin films grown on sapphire substrate (type B film); the top surface of WS2 grown on GaN (type C film); and ...
By the same token, the growth interface of our thick (400 nm) type B film also demonstrated an n-type band diagram. Neglecting the small change in the valence band offset after the transfer of the WS2 film onto the GaN substrate, as the interface attraction was dominated by weak vdW ...
type waferN 型晶体 N-type N 型 N.heptane insolubles 正庚烷不溶物 nab 丘顶 nacelle 导流罩短舱尾轴包套 nacelle 导流罩短舱尾轴包套快艇舱室 nacreous clouds 贝母云 nacrostructure 宏观结构 nadir 天底 nadir 天底;最低点 nadir 天底最低点最低温度 Nagasaki Marine Observatory 长崎海洋气象台 nail brush...
The parameters for band diagram evaluation have been applied based on the electrons and holes effective mass and the donor and acceptor concentrations and so on. In this work, wide band gap materials of GaN material as a p-type layer and MgZnO material as an n-type layer for the proposed ...
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