Fig. 4. Energy-band diagram sketches at VOC and 1 Sun illustrating different n-type contact situation with (a) lowly-doped and thin layer, (b) lowly-doped and thick layer, (c) highly doped and thin layer, and (d) ideal electrode work-function match. VOC improves monotonically with the...
Band offsetsIn this work, we report on the determination of band discontinuities and energy band diagram of the Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface at equilibrium and room temperature, by capacitance-voltage measurements (C-V). Mesa diodes,...
The parameters for band diagram evaluation have been applied based on the electrons and holes effective mass and the donor and acceptor concentrations and so on. In this work, wide band gap materials of GaN material as a p-type layer and MgZnO material as an n-type layer for the proposed ...
In order to make it more clear, the distribution of the oxygen vacancies, potential profile, and the band diagram are schematically illustrated in Fig. 4. For convenience, the sur- face plane is defined as x-y plane with z direction perpendicular to the surface. For vacuum cleaved sur- ...
aSchematic of thep-njunction based onn-type h-BN andp-type GaN.bPhotograph of the fabricatedn-hBN/p-GaN junction array on board.cBand diagram of then-hBN/p-GaN junction.d–eLinear and logarithmic I-V curves of thep-njunction based on one monolayer and six monolayersn-type h-BN, resp...
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