aTin oxide, SnO2, is an n-type semiconductor with a wide band gap (Eg = 3.6 eV, at 300K) and well known for potential applications as excellent gas sensors, optoelectronic devices and so on. 罐子氧化物, SnO2,是一个n类型半导体与一宽带隙 (即= 3.6 eV,在300K) 和知名为潜在的应用作为优秀...
The P-type semiconductor can be defined as, once the trivalent impurity atoms such as indium, gallium are added to an intrinsic semiconductor, and then it is known as a p-type semiconductor. In this semiconductor, the majority charge carriers are holes whereas minority charge carriers are electr...
Modelling of n-type CdTe photoluminescence variation with polarization: a probe of the shift of semiconductor band edgesPhotoluminescencen-type CdTePhotoluminescence techniques are used as a probe of energetic surface band edge configuration for n-type CdTe in the presence of Ce4+ ions. The band ...
摘要: An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials....
Understanding and controlling point defects in semiconductors are essential for developing advanced electronic and optoelectronic devices. Germanium telluride (GeTe), a semiconductor with a rhombohedral-to-cubic structural phase transition and a high con
One-dimensional carbon nanotubes are promising candidates for thermoelectrics because of their excellent electrical and mechanical properties. However, the large n-type power factor remains elusive in macroscopic carbon nanotubes films. Herein, we report
K. Physics of Semiconductor Devices (Wiley, 2007). 21. Cen, C. et al. Nanoscale control of an interfacial metal-insulator transition at room temperature. Nat. Mater. 7, 298–302 (2008). 22. Irvin, P. et al. Anomalous High Mobility in LaAlO3/SrTiO3 Nanowires. Nano. Lett. 13, 364...
semiconductor quantum wells/ pressure dependenceWe report the measurement of the pressure dependence for the band-gap energy E g and conduction-band mass m c for an 80 Aring-wide n-type In 0.20Ga 0.80As/GaAs strained-single-quantum well at 4.2 K for pressures between 0 and 35 kbar and ...
The present invention proposes a method capable of developing a chalcogenide material (hereinafter, referred to as ‘N-type chalcogenide material) which shows the N-type semiconductor characteristics by injecting oxygen into the chalcogenide material having such a defect, that is, showing the P-type ...
A Light Emitting Diode (LED) is a solid state device that converts electrical energy to light. Light is emitted from an active layer of semiconductor materials sandwiched between oppositely doped layers when a voltage is applied across the doped layers. There are many different LED device structur...