MOSFET – P-Channel 100 V FQD8P10TM-F085 Description These P−Channel enhancement mode power field effect transistors are produced using onsemi's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on−state resistance, provide superior ...
MOSFET – P-Channel, Shielded Gate, POWERTRENCH) -150 V, -2.2 A, 255 mW FDS86267P General Description This P−Channel MOSFET is produced using onsemi's advanced POWERTRENCH process that incorporates shielded gate technology. The process has been optimized for the on−state resistance and ...
STS5PF30L P-channel 30V - 0.045Ω - 5A SO-8 STripFET™ Power MOSFET General features Type STS5PF30L VDSS 30V RDS(on) <0.055Ω ID 5A ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold drive ■ Standard outline for easy automated surface mount assembly ...
沟道类型 P沟道 导电方式 增强型 封装外形 SMD(SO)/表面封装 数量 8500 可售卖地 全国 型号 CSD25310Q2 标准包装 3,000 供应商设备封装 6-SON (2x2) 开态Rds(最大)@ Id ,V GS 23.9 mOhm @ 5A, 4.5V FET型 MOSFET P-Channel, Metal Oxide 功率- 最大 2.9W 封装/外壳 6-WDFN Exposed ...
MOSFET 3D Band Diagram 2. 从能带图角度来看短沟效应: 理解了上面的MOSFET的能带图,我们看下图,从图中可以得出: a. 对于短沟道(L很小)的MOS管,由于Source和Drain的距离太近,导致Channel的能带被向下拉,因此导致了处于Cut-Off状态下的器件leakage会增大(因为沟道的势垒降低了,在常温下热激发的电子会有更多能够...
STL62P3LLH6 P-channel -30 V, 9 mΩ typ., -62 A STripFET™ H6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STL62P3LLH6 VDS -30 V RDS(on) max 10.5 mΩ ID -62 A Very low on-resistance ...
DMG3415U P-CHANNEL 增强模式 MOSFET 数据手册说明书 DMG3415U Document number:DS31735 Rev. 13 - 3 1 of 7 www.diodes.com March 2018 © Diodes Incorporated P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ∙ Low On-Resistance ∙ Low Input Capacitance ∙ Fast Switching Speed...
JMTP120C03D Description JMT N And P-Channel Enhancement Mode MOSFET Features N-Channel: 30V, 10A RDS(ON) < 13mΩ @ VGS = 10V RDS(ON) < 20mΩ @ VGS = 4.5V P-Channel: -30V, -12A RDS(ON) < 25mΩ @ VGS = -10V RDS(ON) < 35mΩ @ VGS = -4.5V Excellent ...
Product Summary V(BR)DSS RDS(ON) max ID max -40V <9mΩ @ VGS = -10V <11mΩ @ VGS = -4.5V -40A View and Internal Schematic Diagram CQD04P11 40V P-CHANNEL MOSFET Description and Applications Trench Power MOSFET technology Low RDSON and Low Thermal Resistance. RoHS...
JMTL2301C Description JMT P-channel Enhancement Mode Power MOSFET Features VDS = -20V, ID = -3A RDS(ON) < 70mΩ @ VGS = -4.5V RDS(ON) < 100mΩ @ VGS = -2.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired ...