出版年:1996-12 页数:653 定价:$ 131.08 ISBN:9780132279352 豆瓣评分 目前无人评价 评价: 内容简介· ··· Written by one of the industry's leading experts, MOSFET Modeling with SPICE brings together all the FET models used in mainstream versions of SPICE, providing a comprehensive, practical...
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The present "state of the art" in analytical MOSFET modeling for SPICE circuit simulation is reviewed, with emphasis on the circuit design usage of these ... D Foty - Kluwer Academic Publishers 被引量: 36发表: 1999年 BSIM4 and MOSFET Modeling For IC Simulation This book presents the art ...
[5] T. S. Ong, “High PowerSwitching Device, SiC MOSFET LTspice Model,” Industry Session: Modeling & Simulation,IEEE Applied Power Electronics Conference and Exposition, 2018. [6] Y.Mukunoki, Y. Nakamura, T. Horiguchi, S.Kinouchi, Y. Nakayama, T. Terashima, M. Kuzumotoand H. Akagi...
[5] T. S. Ong, “High PowerSwitching Device, SiC MOSFET LTspice Model,” Industry Session: Modeling & Simulation,IEEE Applied Power Electronics Conference and Exposition, 2018. [6] Y.Mukunoki, Y. Nakamura, T. Horiguchi, S.Kinouchi, Y. Nakayama, T. Terashima, M. Kuzumotoand H. Akagi...
A.G. MilnesDepartment of Electrical Engineering Carnegie-Mellon University Pittsburgh, PA 15213 U.S.AElsevier LtdSolid State ElectronicsCheng, H. et al. Power MOSFET Characteristics with Modified SPICE Modeling Solid State Electronics , No. 12, 25 (1982), pp- 1209 - 1212...
SPICE model of trench-gate MOSFET device [ J ]. Journal of Southeast University (English Edition), 2016, 32(4): 408 - 414. DOI: 10. 3969/j. issn. 1003 -7985.2016.04.003. modeling of double diffused MOSFET (DMOSFET). Since the gate of the trench-gate MOSFET extends into the N-...
simulations to approximate temperature behavior. The vast majority of the users I am familiar with would not be able to modify the model (or its parameters) properly and get the actual temperature behav...
SunChenchao SunWeifeng (NationalASICSystemEngineeringTechnologyResearchCen~r,SoutheastUniversity,Nanjing210096,China) Abstract:TopredictthedegradationoftheMOSI酊 (metal—oxide—semiconductorfield—effeCttran— sistor)deviceundertheinfluenceofthehotcarriereffect,areliabilitySPICE(simulationprogram withintegratedcircuit...