perovskite solar cellsP–N junctionsElectron transport layer (ETL)‐free perovskite solar cells (PSCs) have witnessed great progress via material and interface engineering. Enlighten by the wisdom from an old story of efficient silicon solar cells design, highly efficient MINP (metal/insulator/n‐...
states that can cause Fermi level pinning12,13,14, thus diminishing the barrier height of the Schottky MS junction. This problem can be effectively tackled by inserting a thin insulator layer that separates the metal and semiconductor, known as a metal–insulator–semiconductor (MIS) junction. ...
4.2Metal-semiconductor and metal-insulator-semiconductor junctions The key step in the development of the photodetector technologies described in next sections is the formation of a junction or an ohmic contact between a semiconductor and other materials, particularly metals.Fig. 4.1Aillustrates the case...
We then finish with the junction field-effect transistor (JFET) and several examples of JFET amplifiers. View chapterExplore book Field-Effect Transistors A. Blicher, ... K.F. Brennan, in Encyclopedia of Physical Science and Technology (Third Edition), 2003 IV Metal-Insulator-Semiconductor Field...
This chapter discusses some topics in the physics of metal-semiconductor junctions and metal-insulator-semiconductor (MIS) junctions. The former topic is treated first in a discussion of the metal-semiconductor junction band diagram at equilibrium and under an applied potential. The results are used ...
Semiconductor device including metal insulator semiconductor field effect transistor and method of manufacturing the same A semiconductor device comprises a semiconductor substrate, an N-channel MISFET and a P-channel MISFET provided on the semiconductor substrate, each of the N- and P-channel MISFETs ...
for metal-insulator-semiconductor thyristor. The function of the gate control is to strengthen, or weaken, the intrinsic regeneration within the m.i.s.s., by means of majority-carrier injection, minority-carrier injection, or electrostatic control of the n-p+ junction voltage. The previously ...
only through the edge sides of Metal 1 (yellow dashed rectangles). The intrinsic SiC layer can take a role of a thin insulator between the Metal 1 and Metal 2 because the amorphous SiC (a-SiC) is a wide bandgap semiconductor. Therefore, the EMSM lateral junction can behave quite ...
surface carrier mobilitySi-SiO 2Si inversion layersMOS structures/ A6820 Solid surface structure A7340Q Electrical properties of metal-insulator-semiconductor ... YC Cheng,EA Sullivan - 《Surface Science》 被引量: 194发表: 1973年 Systematics of metal-insulator interfacial energies: A new rule for...
Apart from being key structures of modern microelectronics, metal-insulator-semiconductor (MIS) junctions are highly promising electrodes for artificial leaves, i.e. photoelectrochemical cells that can convert sunlight into energy-rich fuels. Here, we de