... metal-semiconductor junction 金属-半导体结〈又名肖特基半导体结〉 minerals separation 选…www.iciba.com|基于3个网页 2. 金属-半导体接面 麻省理工学院 ... ... 载子的漂移和扩散 Carrier Drift and Diffusion 金属-半导体接面 Metal-Semiconductor Junction ... www.myoops.org|基于2个网页...
金属-半导体接触简介欧姆1 metal semiconductor junction5.pdf,Metal-Semiconductor Contact 1.1 Introduction 11.22 SchottkySchottky ContactsContacts 11.33 OhmicOhmic ContactsContacts 1 1.1 Introduction EEE000 EEE000 - E0 (vacuum level) : used as a reference l
2) like-metal-Semiconductor junction 类金属-半导体结3) metal-semiconductor-metal structure 金属-半导体-金属结构4) msm 金属 半导体 金属结构 例句>> 5) MSM 金属-半导体-金属 1. A new type metal-semiconductor-metal(MSM) detector with recessed interdigital electrodes is proposed. 提出了一种...
The substrate of the MESFET is formed of a substrate body, a first semiconductor layer made of n.sup.+ -GaAs doped with Si at a concentration of 2×10.sup.18 atoms/cm.sup.3 and a second semiconductor layer made of n.sup.+ -InGaAs doped with Si at a concentration of 1×10.sup....
pn结势垒(barrierofp-njunction) pn结的空间电荷区中,存在由n边指向p边的自建电场。因此,自然形成n区高于p区的电势差Vd。相应的电子势能之差即能带的弯曲量qVd称为pn结的势垒高度。pn结的p区和n区的多数载流子运动时必须越过势垒才能到达对方区域,载流子的能量低于势垒高度,就被势垒阻挡而不能前进,这个垫垒叫做pn结...
It is evident that in normal electrical measurements where one desires an applied field to exist across the semiconductor and not across the metal-semiconductor junction, ohmic contacts are needed. The usual run-of-the-mill contact is neither very blocking nor very ohmic; care and technique are ...
(containing the effective mass of the considered semiconductor). The effect of illuminating the metal-semiconductor junction is similar to the case of a p–n junction (with a thin highly doped zone), being the semiconductor as the light absorber, hence this junction can be the base for self-...
Another important structure involves a semiconductor in intimate contact with a metal, leading to what is called a metal-semiconductor junction. Under certain circumstances, this configuration can also lead to an electrical diode.ManijehRazeghiManijehRazeghi...
4.15 Photodiodes Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 4-* Two kinds of metal-semiconductor contacts: Rectifying Schottky diodes: metal on lightly doped silicon Low-resistance ohmic contacts: metal on heavily doped silicon Part III: Metal-Semiconductor Junction Semiconductor...
半导体英文课件 PN and Metal-Semiconductor Junctions Chapter4PNandMetal-SemiconductorJunctions 4.1BuildingBlocksofthePNJunctionTheory Donorions N-typeP-type –V+ I NP I diodesymbol Reversebias V Forwardbias PNjunctionispresentinperhapseverysemiconductordevice.ModernSemiconductorDevicesforIntegratedCircuits(C.Hu)...