金属-半导体接触简介欧姆1 metal semiconductor junction5.pdf,Metal-Semiconductor Contact 1.1 Introduction 11.22 SchottkySchottky ContactsContacts 11.33 OhmicOhmic ContactsContacts 1 1.1 Introduction EEE000 EEE000 - E0 (vacuum level) : used as a reference l
Metal–semiconductor junction in silicon nanostructures: role of interface trapsNANOSTRUCTURESBAND gapsFERMI levelSILICONSILICON oxideSilicon nanostructures have been prepared on Si wafer using electrochemical etching process. The transformation of aluminum/nanostructured Si junction from Schottky to Ohmic nature ...
Heat treatment of the metal–semiconductor junction leads to diffusion of the metal into the semiconductor, producing a high-conductivity surface region to which contact can be more easily made. Even if the energetics of the metal–semiconductor contact are not suitable for an ohmic contact under ...
whereɛsandNDare thedielectricconstant and donor concentration of the (n)semiconductor, respectively. The junction potential barrier also determines the majority carrier current density,Jn, in the metal-(n)semiconductor junction (thermoionic emission model provided the potential barrier height is ≫kT...
The electronic structure and the conductance of a carbon nanotube based metal/semiconductor/metal intramolecular junction is investigated numerically. The nature of electronic states at the interfaces and in the semiconductor section is ... F Triozon,P Lambin,S Roche - 《Nanotechnology》 被引量: 59...
a metallic semiconductor junction, to which a barrier height is changed, and the barrier height stably and excellently in controllability by specifying the face azimuth of the surface of a compound semiconductor, and specifying the semiconductor face superstructure at the time of forming the junction...
JUNCTION OF METAL AND SEMICONDUCTOR 专利名称：JUNCTION OF METAL AND SEMICONDUCTOR 发明人：KASHIWARA TAKAHO 申请号：JP6892084 申请日：19840406 公开号：JPS60211950A 公开日：19851024 专利内容由知识产权出版社提供 摘要：PURPOSE:To enable to manufacture a structure, wherein a semiconductor chip has been ...
van der Waals metal-semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier. Sci. Adv. 2, e1600069 (2016). Google Scholar Schulman, D. S., Arnold, A. J. & Das, S. Contact engineering for 2D materials and devices. Chem. Soc. Rev. 47, 3037–3058...
Van der Waals metal-semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier. Sci. Adv. 2, e1600069 (2016). Article ADS PubMed PubMed Central Google Scholar Pospischil, A., Furchi, M. M. & Mueller, T. Solar-energy conversion and light emission in ...
This metal-semiconductor dichotomy allows construction of single-2D-material-based electronic devices with low contact resistance and low leakage currents. In particular, due to the interaction between Sn and the Si substrate, the semiconducting monolayer-SnO/Si(001) has a highly anisotropic band ...