8nm直径垂直堆叠的Si 纳米线,通过RMG(Replacement Metal Gate)工艺在体硅上生长,短沟道特性非常好(SS=65mV/dec,DIBL=42mV/V当LG=24nm),Si 纳米线下的寄生沟道通过GP(Ground Plane)得到了有效抑制 1.以体硅进行生长 2.GP 3.SiGe/Si/SiGe/Si外延,主要是为了之后通过刻蚀SiGe来形成Si纳米线 4.低温STI填充,...
在0.4?m上的CMOS后栅结构的SEM测试表明,没有发现类似CMP工艺中产生的“碟形效应”现象,在整个晶圆表面上获得了良好的平坦化性能。这种无CMP的平坦化工艺,为亚100 nm高K金属栅CMOS后栅工艺器件的集成打下了基础。Full-Text Contact Us service@oalib.com QQ:3279437679 WhatsApp +8615387084133 ...
1、Metal腐蚀工艺介绍腐蚀工艺介绍ETCH 2012-3 简介 Metal结构、成分 Metal腐蚀工艺 常见异常介绍 金属在半导体器件中,主要起导线作用。Al-1Al-2Al-5STIPMDIMD-1IMD-2STIRTO/CVD Nitride CVD OxideCMP,RPS Oxide/Nitride StripSpacer (Oxide, Nitride) LP CVD, PE CVD Polycide Gate Centura Poly DepSalicide ...
A method includes forming a dummy gate of a transistor at a surface of a wafer, removing the dummy gate, and filling a metallic material into a trench left by the removed dummy gate. A Chemical Mechanical Polish (CMP) is then performed on the metallic material, wherein a remaining portion...
N-Well EPI AL还有什么作用?Passivation(PECVD)PlanarizedPVDAl,CVDAl IMD/CMP(PE/SA,HDP-CVD)AlStack(PVD)WPlug/CMPWCVD+CMP PMD/CMPSABPSG/RTA-CMP Spacer(Oxide,Nitride)LPCVD,PECVDPolycideGate CenturaPolyDep SalicideTiSi2PVDTi/RTAGateOxide(RTO)STIRTO/CVDNitrideCVDOxideCMP,RPSOxide/NitrideStrip ...
Metal腐蚀工艺常见异常介绍IC结构:金属在半导体器件中,主要起导线作用。Al-1Al-2Al-5STIPMDIMD-1IMD-2STIRTO/CVD NitrideCVD OxideCMP,RPS Oxide/Nitride StripSpacer(Oxide, Nitride)LP CVD, PE CVDPolycide GateCentura Poly DepSalicideTiSi 2PVD Ti / RTA...
AL-Gate, AL Electrode 常规工艺 AL工艺流程, LOCOS工艺. 根据需要 Ti/TiN barrier, TiN Arc W Plug: CD0.6um, AL 填充问题 Cu工艺流程, STI工艺, CMP, Ta Barrier,电阻率低 * 下层Ti/TiN Barrier 上层TiN ARC Ti 60 微欧-CM Ta 13-16 Cu 1.68 Al 2.65 W 8 * 生活家饮食保健孕期选择食用油的...
For metal etch For metal etch * ETCH 2012-3 Al-1 Al-2 Al-5 STI PMD IMD-1 IMD-2 STI RTO/CVD Nitride CVD Oxide CMP, RPS Oxide/Nitride Strip Spacer (Oxide, Nitride) LP CVD, PE CVD Polycide Gate Centura Poly Dep Salicide TiSi 2 PVD Ti / RTA Gate Oxide (RTO) n+ n+ p+ p+...
metal干法刻蚀microloadingetch工艺刻蚀 MetalETCH2012-3目录:目录:•简介•Metal结构、成分•Metal腐蚀工艺•常见异常介绍ICIC结构结构::金属在半导体器件中,主要起导线作用。Al-1Al-2Al-5STIPMDIMD-1IMD-2STIRTO/CVDNitrideCVDOxideCMP,RPSOxide/NitrideStripSpacer(Oxide,Nitride)LPCVD,PECVDPolycideGateCentura...
used to measureoxide,STI,andmetalCMPprocesses. filmetrics.com filmetrics.com 我们的 F80 厚度成像产品用于测量氧化物、STI和金属化学机械研磨加工。 cn.filmetrics.com cn.filmetrics.com (1) The containedmetalfor theoxidemineral resource is quoted in acid soluble copper terms (ASCu), ...