8nm直径垂直堆叠的Si 纳米线,通过RMG(Replacement Metal Gate)工艺在体硅上生长,短沟道特性非常好(SS=65mV/dec,DIBL=42mV/V当LG=24nm),Si 纳米线下的寄生沟道通过GP(Ground Plane)得到了有效抑制 1.以体硅进行生长 2.GP 3.SiGe/Si/SiGe/Si外延,主要是为了之后通过刻蚀SiGe来形成Si纳米线 4.低温STI填充,...
1、Metal腐蚀工艺介绍腐蚀工艺介绍ETCH 2012-3 简介 Metal结构、成分 Metal腐蚀工艺 常见异常介绍 金属在半导体器件中,主要起导线作用。Al-1Al-2Al-5STIPMDIMD-1IMD-2STIRTO/CVD Nitride CVD OxideCMP,RPS Oxide/Nitride StripSpacer (Oxide, Nitride) LP CVD, PE CVD Polycide Gate Centura Poly DepSalicide ...
在0.4?m上的CMOS后栅结构的SEM测试表明,没有发现类似CMP工艺中产生的“碟形效应”现象,在整个晶圆表面上获得了良好的平坦化性能。这种无CMP的平坦化工艺,为亚100 nm高K金属栅CMOS后栅工艺器件的集成打下了基础。Full-Text Contact Us service@oalib.com QQ:3279437679 WhatsApp +8615387084133 ...
m上的CMOS后栅结构的SEM测试表明,没有发现类似CMP工艺中产生的"碟形效应"现象,在整个晶圆表面上获得了良好的平坦化性能.这种无CMP的平坦化工艺,为亚100 nm高K金属栅CMOS后栅工艺器件的集成打下了基础.关键词: 金属栅 假栅 旋转涂布玻璃 等离子回刻 平坦化 ...
Process details as well as initial electrical characterization results on fully functional gate Gd2O3 dielectric MOSFETs with equivalent oxide thickness (EOT) down to 1nm are discussed.关键词: damascene metal gate technology chemical mechanical planarization CMP high-k gate dielectrics metal gate MOSFET...
A method includes forming a dummy gate of a transistor at a surface of a wafer, removing the dummy gate, and filling a metallic material into a trench left by the removed dummy gate. A Chemical Mechanical Polish (CMP) is then performed on the metallic material, wherein a remaining portion...
edge exclusion of 5 mm.SEM results indicated that there was little "dish effect" on the 0.4 μm gate-stack structure and finally achieved a good planarization profile on the whole substrate.The technology provided a CMP-less process basis for sub-100 nm high-k/metal gate-last CMOS ...
N-Well EPI AL还有什么作用?Passivation(PECVD)PlanarizedPVDAl,CVDAl IMD/CMP(PE/SA,HDP-CVD)AlStack(PVD)WPlug/CMPWCVD+CMP PMD/CMPSABPSG/RTA-CMP Spacer(Oxide,Nitride)LPCVD,PECVDPolycideGate CenturaPolyDep SalicideTiSi2PVDTi/RTAGateOxide(RTO)STIRTO/CVDNitrideCVDOxideCMP,RPSOxide/NitrideStrip ...
Metal腐蚀工艺常见异常介绍IC结构:金属在半导体器件中,主要起导线作用。Al-1Al-2Al-5STIPMDIMD-1IMD-2STIRTO/CVD NitrideCVD OxideCMP,RPS Oxide/Nitride StripSpacer(Oxide, Nitride)LP CVD, PE CVDPolycide GateCentura Poly DepSalicideTiSi 2PVD Ti / RTA...
AL-Gate, AL Electrode 常规工艺 AL工艺流程, LOCOS工艺. 根据需要 Ti/TiN barrier, TiN Arc W Plug: CD0.6um, AL 填充问题 Cu工艺流程, STI工艺, CMP, Ta Barrier,电阻率低 * 下层Ti/TiN Barrier 上层TiN ARC Ti 60 微欧-CM Ta 13-16 Cu 1.68 Al 2.65 W 8 * 生活家饮食保健孕期选择食用油的...