solar cellsspace charge/ amorphous Si:H pin solar cellssemiconductorCapacitance and collection efficiency measurements on all-CVD pin solar cells are presented, indicating high space charge density and a thin front junction space charge region. These results, along with J sc vs. thickness, are ...
4. Chemical Reaction: Inside the reactor, the silane and oxygen gases react to form silicon atoms and hydrogen gas according to the following chemical equation: SiH4 + O2 → Si + 2H2. 5. Film Deposition: The silicon atoms condense on the substrate surface, forming a polycrystalline silicon ...
为了了解 Si 衬底上 SiC 的成核及 长大过程,采用 LPCVD 方法在 Si(001)衬底上生长出了方形 3C-SiC 岛,利用 Nomarski 光学显微镜和扫描电子显微镜(SEM)观察了 SiC 岛的形状、尺寸、密度 和界面形貌.结果表明,3C-SiC 岛生长所需的 Si 原子来自反应气源,衬底上的 Si 原子 不发生迁移或外扩散,气相中 C 原子...
从实验出发,用LPCVD外延 系统在偏向11-20方向8°的4H-SiC(0001)Si面衬底上,利用CVD技术进行了4H-SiC同质外延生长。外延后在熔融KOH腐蚀液中进行 腐蚀,使用SEM和光学显... 李哲洋[1],刘六亭[1],董逊[1],... - 《电子工业专用设备》 被引量: 23发表: 2005年 Surface chemical states on LPCVD-grown 4H...
Heteroepitaxial Growth of Single 3C-SiC Thin Films on Si (100) Substrates Using a Single-Source Precursor of Hexamethyldisilane by APCVD This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure ......
If silane percentage and ion bombardment are increased, a silicon rich silicon nitride is formed. It is denser and underlies lower stress or even compressive stress. Low deposition temperature stabilizes the nonstoichiometric Si3+xN4-y. Chemical composition can be measured by the refraction index of...
参照实施例1待清洗的石英舟:LPCVD非晶硅制备时,每次的非晶硅层镀膜膜厚A为150nm,每个石英舟使用次数B为100次,硅片尺寸C为163.75mm,每个石英舟放置小舟个数D为10个,系数H是与每个石英舟及其中放置的D个小舟的总表面积相关的估算偏差,系数H为0.62~3.73。 一种现有的LPCVD石英舟的清洗方法,具体包括如下步骤: 步骤...
扩散和退火过程包括POCl3和BBr3的掺杂、选择性激光掺杂和a-Si层的高温退火步骤。TOPCon路线的COO中扩散与退火在这里明显高,由于: a)过程持续时间更长BBr3扩散相比POCl3-based过程导致显著降低吞吐量,和b)要求额外的POCl3——掺杂过程或高温退火步骤晶硅层。
Metal–oxide-semiconductor (MOS) devices, using a Si substrate and a thermal SiON film as the gate dielectric on a Ge layer, have been physically and elect... YH Wu,ML Wu,JR Wu,... - 《Microelectronic Engineering》 被引量: 15发表: 2010年 Preparation and properties of SiCN diffusion bar...
A.L. GieseckeC. PorschatisB. ChmielakT. WahlbrinkN. PlerosD. TsiokosOptics CommunicationsG. Dabos, A. Manolis, A. L. Giesecke, C. Porschatis, B. Chmielak, T. Wahlbrink, N. Pleros, and D. Tsiokos, "TM grating coupler on low-loss LPCVD based Si3N4 waveguide platform," Opt. ...