Since the LPCVD-W thin film was under low stress of about 5×10 9 dyne/cm 2 , it was adhesive enough to stand itself on the SiO 2 substrate during the conventional wet process. The reactivity of the LPCVD-W thin
Over the years, several different types of modifications have been made to the CVD process, such as plasma-enhanced CVD (PECVD), microwave plasma-assisted CVD (MPCVD), laser CVD (LCVD), low-pressure CVD (LPCVD), etc. Attempts to synthesize BCN was first reported by Kosalapova et al. [...
A floating gate transistor has a reduced barrier energy at an interface with an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The data charge retention time on the floating gate is reduced. Th...
Malhi et al., “Characteristics and Three-Dimensional Integration of MOSFET's in Small-Grain LPCVD Polycrystalline Silicon”, IEEE Transactions on Electron Devices, vol. ED-32, No. 2, Feb. 1985, pp. 258-281. Malinge, An 8Mbit DRAM Design Using a 1TBulk Cell, 2005, VLSI Circuits. ...
However, the current collapse phenomenon induced by the interface state problem is the critical limitation for the high linearity application of MIS structure, which needs complicated process optimization. Apart from gate-recess structure, field plate structure, and MIS structure, the attention to the ...
The enormous strides that have been made at the Arts/Science interface by the meticulous application of Raman microscopy to the study of artwork and archaeological artefacts are outlined. Important recent case studies are presented to illustrate the power of the technique to answer key questions of ...
A semiconductor device, the device including: a first single crystal substrate and plurality of logic circuits, where the first single crystal substrate has a device area, where the device area is significantly larger than a reticle size, where the plurality of logic circuits include an array of...
Shiraishi, K., et al., “Physics in Fermi Level Pinning at the PolySi/Hf-based High-k Oxide Interface,” 2004 Symposium on VLSI Technology, Digest of Technical Papers, pp. 108-109. Cartier, E., et al., “Systematic study of pFET Vt with Hf-based gate stacks with poly-Si and FUS...
Therefore, as the interface between the low-voltage controller and the high-voltage power stage, the integrated micro-transformers that power the gate drivers through embedded galvanic isolation barriers [9] to control the energy flow in WBG switching devices are required to protect against large ...
Introduction The development of Micro-Electro-Mechanical Systems (MEMS) technology and its integration into complex systems for biological applications has generated a new field of study, called "BioMEMS" [1–4]. MEMS technology offers the advantage of building two dimensional (2D) or three ...