InGaAsheteroepitaxial growthThin GaAs compliant substrates have been developed in order to reduce the strain in lattice-mismatched layers during epitaxial overgrowth. Using OMVPE a variety of (30–80) thin GaAs layers were grown and successfully fused at 660°C on a host GaAs substrate with twist...
Here, taking lattice-mismatched hexagonal α-Fe2O3 and tetragonal fluorine-doped tin oxide as the example, atomic-level investigations reveal that a coherent ordered structure forms at their interface, and via an oxygen-mediated dimensional and chemical-matching manner, that is, matched Voronoi ...
lattice-mismatched layersThe lattice deformation of strained InGaP layers grown on InAlAs or InP layers was studied using two kinds of ion channeling techniques. One technique was that of analyzing the angular scans of the 110 directions which showed lattice strain and relaxation. The other technique...
Monolithic lattice-mismatched semiconductor heterostructures are fabricated by bonding patterned substrates with alternative active-area materials formed thereon to a rigid dielectric platform and then removing the highly-defective interface areas along with the underlying substrates to produce alternative active-...
The total number of missing carriers in the interface region is on the order of 3×101 1 cm 2 and is two orders of magnitude lower than that expected from dangling bond lattice‐mismatch considerations. 展开 关键词: III-V semiconductors Interface structure Antimony Epitaxy Band gap ...
LATTICE-MISMATCHED SEMICONDUCTOR STRUCTURES AND RE 优质文献 相似文献 参考文献Strain, dislocations, and critical dimensions of laterally small lattice-mismatched semiconductor layers A rectangular strained epilayer with its length much larger than its heighthand width 2lis considered. The energy change on in...
United States Patent US7638842 Note: If you have problems viewing the PDF, please make sure you have the latest version ofAdobe Acrobat. Back to full text
Lattice-mismatched crystal structures and semicond 专利名称：Lattice-mismatched crystal structures and semiconductor device using the same 发明人：Tomoyoshi Mishima,Katsuhiko Higuchi,Mitsuhiro Mori,Makoto Kudo,Chushiro Kusano 申请号：US08/506193 申请日：19950724 公开号：US05633516A 公开日：19970527 专利内容...
Nucleation of lattice-mismatched transition-metal nitride films: limitations on superlattice growth M Shinn,PB Mirkarimi,SA Barnett 被引量: 0发表: 1993年 REVIEW ARTICLE: Growth and applications of Group III-nitrides Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on ...
United States Patent US5163118 Note: If you have problems viewing the PDF, please make sure you have the latest version ofAdobe Acrobat. Back to full text