Lattice Mismatched Hetero-Epitaxial FilmAn embodiment concerns forming an EPI film on a substrate where the EPI film has a different lattice constant from the substrate. The EPI film and substrate may include different materials to collectively form a hetero-epitaxial device having, for example, a ...
Monolithic lattice-mismatched semiconductor heterostructures are fabricated by bonding patterned substrates with alternative active-area materials formed thereon to a rigid dielectric platform and then removing the highly-defective interface areas along with the underlying substrates to produce alternative active-...
Lattice mismatched growth for mid-IR VECSELs 来自 掌桥科研 喜欢 0 阅读量: 26 作者:G Balakrishnan,U Keller,TJ Rotter,P Ahirwar,SP Clark,V Patel,A Albrecht,CP Hains,YY Lai,TL Wang 展开 摘要: We demonstrate a novel epitaxial process for the growth of low-dislocation density GaSb on GaAs....
et al. Stacking textured films on lattice-mismatched transparent conducting oxides via matched Voronoi cell of oxygen sublattice. Nat. Mater. 23, 383–390 (2024). https://doi.org/10.1038/s41563-023-01746-3 Download citation Received22 November 2022 Accepted31 October 2023 Published07 December ...
In this study, we evaluated the junction decoupling effects of MoS2layers for a lattice mismatched junction structure. SKPM and a junction-resistance evaluation suggested that the work function of MoS2changed according to the number of layers and indicated the formation of a finite potential barrier ...
InGaAs heterostructuresdeep level transient spectroscopy (DLTSUsing CPM dye laser and self-mode-locked Ti sapphire laser as pump-probe optical sources, the effects of bandfilling and bandgap shrinkage on the femtosecond absorption saturation spectra of GaAs film have been studied, For exciting photon ...
LATTICE-MISMATCHED SEMICONDUCTOR STRUCTURES ON IN 专利名称：LATTICE-MISMATCHED SEMICONDUCTOR STRUCTURES ON INSULATORS AND THEIR FABRICATION METHODS 发明人：CURRIE, Matthew, T.,LOCHTEFELD, Anthony, J.,CHENG, Zhiyuan,LANGDO, Thomas, A.申请号：US2006033859 申请日：20060830 公开号：WO07/030368P1 公开日：...
Wereportonthelattice-mismatchedgrowthofIn053Ga047As/In052Al048Asmodulation-dopedheterostructuresonGaAssubstratesbymolecularbeamepitaxyAbufferlayerstructureanditsgrowthconditionswereoptimizedAsaresult,weobtainedasamplewithamirrorlikesurfacewhichexhibitselectronmobilityof10500cm2/Vsand48500cm2/Vsat300Kand77K,respectively...
United States Patent US5163118 Note: If you have problems viewing the PDF, please make sure you have the latest version ofAdobe Acrobat. Back to full text
MBE Growth and Characterization of lattice mismatched III-Antimonide semiconductors 来自 wrap.warwick.ac.uk 喜欢 0 阅读量: 16 作者: H Shen 摘要: In recent years, there emerges intense research on heteroepitaxial growth of semiconductors, especially towards the material systems with interesting optical ...