akpdbdir kpdbdir[translate] anote:box outside view 注:箱子外部视图[translate] aProgram Files 程序文件[translate] aJap is 开始[translate] abrush aside US 漠视美国[translate] alattice matched 被匹配的格子[translate]
High-quality AlInN layers and AlInN/GaN Bragg mirrors near lattice-matched to GaN layers are grown by metalorganic vapor-phase epitaxy on a GaN buffer layer with no cracks over full 2-inch sapphire wafers. The index contrast relative to GaN is 6.5% to 11% for wavelengths ranging from 950 ...
Lattice-matchedHfNbufferlayersforepitaxyofGaNonSiR.Armitagea),QingYang,H.Feickb),J.Gebauer,andE.R.WeberMaterialsSciencesDivision,LawrenceBerkeleyNationalLaboratory,andDepartmentofMaterialsScienceandEngineering,UniversityofCaliforniaatBerkeley,California94720SatokoShinkaiandKatsutakaSasakiDepartmentofMaterialsScience,Faculty...
A perfectly or approximately lattice-matched semiconductor layer for use in an electronic or optoelectronic device. Perfectly lattice-matched (“PLM”) semiconductor layers prevent or lessen the formation and propagation of crystal defects in semiconductor devices, defects that can decrease the performance...
Terrestrial GaInP/GaInAs/Ge 3-junction cells have been produced at Spectrolab with record efficiencies independently verified at NREL, of 31.3% for metamorphic 1-sun cells and 32.0% for lattice-matched 1-sun cells (25/spl deg/C, AM1.5G, 4.00 cm/sup 2/), and 35.2% for lattice-matched ...
LATTICE-MATCHED AND METAMORPHIC GaInPIGaInAslGe CONCENTRATOR SOLAR CELLSYoon, HKinsey, G SCotal, H LEmer, J HSherif, R AEmery, KMetzger, WAhrenkiel, R KKaram, N H
A perfectly or approximately lattice-matched semiconductor layer for use in an electronic or optoelectronic device. Perfectly lattice-matched ("PLM") semiconductor layers prevent or lessen the formation and propagation of crystal defects in semiconductor devices, defects that can decrease the performance ...
A novel structure, which is both a lattice鈥恗atched heterostructure and a Schottky barrier, is fabricated by epitaxialgrowth of (111) oriented HgSe on (0001) oriented CdSe. Hydrogen transport CVD is used, with a HgSe source temperature of 420掳C and a CdSe substrate temperature of 330掳C...
专利名称：Lattice-matched semiconductor materials for use in electronic or optoelectronic devices 发明人：Richard Roland King,James H. Ermer,Peter Colter,Nasser H. Karam 申请号：US09876193 申请日：20010606 公开号：US06586669B2 公开日：20030701 专利内容由知识产权出版社提供 专利附图：摘要：A perfectly...
InAlN can be in-plane lattice matched (LM) to GaN, and the formed InAlN/GaN heterostructure is one kind of materials with high conductivity to be used in GaN-based high electron mobility transistors (HEMTs). It is reported that the high-mobility InAlN/GaN material is grown by using pulsed...