akpdbdir kpdbdir[translate] anote:box outside view 注:箱子外部视图[translate] aProgram Files 程序文件[translate] aJap is 开始[translate] abrush aside US 漠视美国[translate] alattice matched 被匹配的格子[translate]
High-quality AlInN lattice matched to GaN can be used in GaN-based optoelectronics, for waveguides and for mirror structures in resonant-cavity light-emitting diodes and monolithic Fabry-P茅rot cavities, for example.doi:US20070003697 A1Jean-Francois Carlin...
A perfectly or approximately lattice-matched semiconductor layer for use in an electronic or optoelectronic device. Perfectly lattice-matched (“PLM”) semiconductor layers prevent or lessen the formation and propagation of crystal defects in semiconductor devices, defects that can decrease the performance...
A perfectly or approximately lattice-matched semiconductor layer for use in an electronic or optoelectronic device. Perfectly lattice-matched ("PLM") semiconductor layers prevent or lessen the formation and propagation of crystal defects in semiconductor devices, defects that can decrease the performance ...
lattice matched heterostructure II-VI semiconductors/ A7330 Surface double layers, Schottky barriers, and work functions A7340L Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions A8110B Crystal growth from vapour A8115H Chemical vapour deposition B0510D ...
Lattice-matched GaP/SiGe virtual substrates for low-dislocation density GaInP/GaAsP/Si solar cells 来自 掌桥科研 喜欢 0 阅读量: 26 作者:AM Carlin,TJ Grassman,MR Brenner,J Grandal,SA Ringel 摘要: Direct integration of GaP/Si must face a small, but non-negligible lattice constant mismatch, ...
US5322572 1991年4月23日 1994年6月21日 The United States Of America As Represented By The United States Department Of Energy Lattice matched subcells: indium phosphide and gallium indium arsenic phosphide; optically transparent prismatic cover layer; efficient energy conversion over small photon ...
Lattice-Matched High Electron Mobility Transistor Lattice-work Lattice-work Lattice-work lattice-wound coil latticed latticed latticed latticed latticed layer Latticed window latticedly latticedly latticelike latticelike latticelikely latticelikely lattices latticework latticework latticework latticing latticin...
for use in electronic or optoelectronic devices 发明人：Richard Roland King,James H. Ermer,Peter Colter,Nasser H. Karam 申请号：US09876193 申请日：20010606 公开号：US06586669B2 公开日：20030701 专利内容由知识产权出版社提供 专利附图：摘要：A perfectly or approximately lattice-matched semiconductor ...
InAlN can be in-plane lattice matched (LM) to GaN, and the formed InAlN/GaN heterostructure is one kind of materials with high conductivity to be used in GaN-based high electron mobility transistors (HEMTs). It is reported that the high-mobility InAlN/GaN material is grown by using pulsed...