This paper presents a large-signal SOI MOSFET model which explicitly includes self-heating effects. Our goal is to develop a model suitable for SOI monolithic microwave IC (MMIC) design which clearly requires a large-signal model accurate at high frequencies. In addition, the model must include ...
Thorough verification of large-signal RF MOSFET models by means of vectorial large-signal measurements This work presents a modeling methodology that uses new types of models called low-frequency, large-signal models in a circuit simulator (Saber) to model a complex hybrid ac/dc power electronics...
A statistical model for the low-frequency (LF) noise behavior of MOSFETs under cyclo-stationary excitation is presented. The model is based on discrete dev... G Wirth,RD Silva,P Srinivasan,... 被引量: 0发表: 2010年 Large signal statistical compact model for LF noise We have performed stat...
At 0% the signal is constantly LOW, essentially meaning no voltage at all. Obviously, this causes the motor to stop.For a detailed explanation of PWM please see the article “Controlling DC Motors with the L298N Dual H-Bridge and an Arduino”. ...
Beijing Mengxing Electronic Technology Co., Ltd.Multispecialty supplier5 yrsCN Hover to zoom in Share Key attributes Other attributes Place of Origin Original Brand Name Original Model Number Module-1299 Mounting Type Standard Description original ...
(orange) removal of the aliased thermal noise. The SNR improvement is also apparent in the spectral domain (Fig.2einset). The noise floor was reduced uniformly across frequencies. Fig.2fillustrates the effects of our processing strategy on a segment of baseline recording without test signal. ...
This paper presents a new nonquasi-static (NQS) model for the MOSFET. The model is derived from physics and only relies on the very basic approximation nee... Roy,S Ananda,Vasi,... - 《IEEE Transactions on Electron Devices》 被引量: 15发表: 2003年 Large-Signal Analysis of Power MOSFETs...
To model nonlinear device behavior at microwave frequencies, accurate large-signal models are required. However, the standard procedure to estimate model parameters is often cumbersome, as it involves several measurement systems (DC, vector network analyzer, etc.). Therefore, we propose a new nonlinea...
General large-signal charge-control equations for the MOSFET drain and source current under nonquasistatic conditionsGeneral large-signal charge-control equations for the drain and source terminal currents of the long-channel MOSFET on a previously proposed recursion relation are presented. These ...
large-signal modelparameter extractionRF modelingIn this article, a large-signal modeling approach based on the combination of equivalent circuit and neuro-space mapping modeling techniques is proposed for MOSFET. In order to account for the dispersion effects, two neuro-space (S) mapping based ...