-20 V to -250 V small signal P-channel MOSFETs and 20 V to 600 V small signal N-channel MOSFETs for automotive, industrial and consumer applications Small signal/small power MOSFET subcategories Industrial Automotive Infineon offers a wide range of small signal and small power MOSFETs. These ...
-20 V to -250 V small signal P-channel MOSFETs and 20 V to 600 V small signal N-channel MOSFETs for automotive, industrial and consumer applications Small signal/small power MOSFET subcategories Industrial Automotive Infineon offers a wide range of small signal and small power MOSFETs. These ...
Qualitative performance of the proposed amplifier is also compared with the circuit which is having BJT-MOSFET in Darlington pair configuration. The proposed amplifier can be used to process audio range signal excursions and may be useful for those applications where high voltage and current gain ...
Package Type:Surface Mount;Application:MOSFET driver;Supplier Type:original manufacturer;Media Available:datasheet;FET Feature:Standard;Operating Temperature:Standard;Series:all type of transistor;Mounting Type:SMT/SMD;Description:MOSFET;Model Number:BUK
250V N-CH SMALL SIGNAL MOSFET IN Place of Origin Mexico Package / Case TO-236-3 Operating Temperature -40~170℃ D/C NEW Application MOSFET driver Supplier Type original manufacturer Media Available datasheet Brand MOSFET Current - Collector (Ic) (Max) N/A Voltage - Collector Emitter Bre...
An analytical method to directly extract the MOSFET small-signal model parameters including non-quais-static and substrate effect from S-parameter is prese... Chi, Y.S.,Lu, J.X.,Zhang, S.Y.,... - Electron Devices and Solid-State Circuits, 2005 IEEE Conference on 被引量: 0发表: 2005...
This paper proposes and demonstrates the extraction of MOSFET threshold voltage, source-drain resistance, gate field mobility reduction factor, and transistor gain factor from the measurement of the small-signal source-drain conductance of a transistor as a function of dc gate bias with zero dc drai...
region•Intheseregions,transistorscanprovidehighvoltage,currentand powergains•Biasisprovidedtostabilizetheoperatingpointinadesiredoperation region•Q-pointalsodetermines –Small-signalparametersoftransistor–Voltagegain,inputresistance,outputresistance–Maximuminputandoutputsignalamplitudes–Powerconsumption Jaeger/...
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9. "Small-Signal RF Design with Dual-Gate MOSFET's," Motorola Semiconductor Products, Inc. Application Note 478A. 10. "A High Gain Integrated Circuit RF-IF Amplifier with Wide Range AGC," Motorola Semiconductor Products, Inc. Application Note 513. 11. "S Parameter Design," Hewlett-Packard...