large-signal modelpower predictionvoltage-controlled oscillatorA modified 0.18 渭m gate-length p-channel MOSFET large-signal rf model, based on the BSIM3v3 model, is presented in this report which achieves a good agreement with the device performance. This large-signal rf model includes the ...
[2] F.Hsu, C. T. Yen, C. C. Hung, C. Y. Lee, L. S. Lee, K. T. Chu and Y. F. Li,"High accuracy large-signal SPICE model for silicon carbideMOSFET,"IEEE 30th International Symposium on Power Semiconductor Devicesand ICs, pp. 403-406, 2018H.[3] A.Stefanskyi, ?. Starzak...
[2] F.Hsu, C. T. Yen, C. C. Hung, C. Y. Lee, L. S. Lee, K. T. Chu and Y. F. Li,"High accuracy large-signal SPICE model for silicon carbideMOSFET,"IEEE 30th International Symposium on Power Semiconductor Devicesand ICs, pp. 403-406, 2018H. [3] A.Stefanskyi, ?. Starz...
RF CMOS modeling: a novel empirical large-signal model for an RF-MOSFET射频CMOS建模:一种新型的用于RF-MOSFET大信号经验模型 本文提出了一种新的用于RF-MOSFET的大信号经验模型.通过分析SMICs 0.18μm RF-CMOS工艺制造的32指nMOSFET,对模型的直流,交流,小信号和大信号特性进行了验证.本模型考... 孙玲玲,...
B-Spline Based, Large-Signal DC and Microwave-Model for SOI MOSFETs We present a large/small-signal, non-quasi-static, charge conserving, SOI MOSFET modeling technique suitable for DC and high frequency circuit design. The ... S Akhtar,P Roblin - 《Analog Integrated Circuits & Signal Process...
[5] POULAIN L,WALDHOFF N,GLORIA D,et al.Small signal and HF noise performance of 45 nm CMOS technology in mmW range[C]//Radio Frequency Integrated Circuits Symposium(RFIC),2011 IEEE.IEEE,2011:1-4. [6] ENZ C.An MOS transistor model for RF IC design valid in all regions of operation...
sistatic conditions General large-signal charge-control equations for the MOSFET drain and source current under nonquasistatic conditionsGeneral large-signal charge-control equations for the MOSFET drain and source current under nonquasistatic conditionsGeneral large-signal charge-control equations for the ...
Supported Product Families Small signal MOSFETs Bill of material (BOM) 2EDF7175F BAS3010B-03W BSS84P Boards & Designs EVAL_BDPS_DD_TOLG Status: active and preferred Infineon Read MoreBuy Online Bill of material (BOM) BAS3010B-03W IPTG014N10NM5 Boards & Designs VD_REF_XDP_48V_TO_POL ...
The large-signal static model as well as the dynamic charges and thermal noise models are derived in a unified way and are valid in all modes of operation. The compact scalable model is a strong candidate for application to deep sub-micron technologies. It is efficient for parameter ...
An improved deep sub-micron (0.25 /spl mu/m) MOSFET RF large signal model that incorporates a new breakdown current model and drain to substrate nonlinear ... D Heo,E Gebara,E Chen,... - Microwave Symposium Digest IEEE Mtt-s International 被引量: 18发表: 2000年 Novel vertical power MOS...