必应词典为您提供interfacetrap的释义,网络释义: 介面的陷阱;界面陷阱;介面的缺陷;
网络释义 1. 表面陷阱电荷密度 ...ced MOS charge analysis)、表面陷阱电荷密度(interface trap density)、介电常数(dielectric constant)和TVS分析(Tri… china.makepolo.com|基于3个网页 2. 界面陷阱密度 (2)具有较高的界面陷阱密度(Interface Trap Density)—由於大部 ...
typePeopleinterface{Name()}typeStudentstruct{}func(*Student)Name(){return}funcNewStudent()People{vars*Studentreturns}funcTestInterfaceTrap(t*testing.T){stu:=NewStudent()ifstu==nil{fmt.Println("stu is nil")}else{fmt.Println("stu is not nil")}} 如果NewStudent()返回的是*Student不是非空接口 ...
Our TSC measurements demonstrate that electron traps at the 4H–SiC/SiO 2 interface consist of two groups of trap levels displayed as two distinguishable TSC signatures and differing by their trapping/detrapping behavior. One of them, chargeable at low temperatures, is displayed as a well-defined...
From the measured value of surface charge and deposited charge dose a value of charge associated with the interface trap is determined. The method also includes determining space charge corresponding to the measured surface potential barrier of the portion of the substrate. With the determined space ...
hwPimInterfaceAddressType hwPimInterfaceAddress hwPimInterfaceName hwPimInstanceID hwPimInstanceName 以下几种情况下,路由器上报Trap: PIM接口收到新的Hello报文,且此接口的DR优先级或IP地址大于共享网段上其他接口。 PIM接口变为Up状态后,在第一个Hello报文周期的时间后,未收到其他接口的Hello报文。
Interface trap densities were extracted by comparing simulated I–V curves with measured data in the subthreshold region, and the density of NITs was calculated from the difference between measured and simulated I–V characteristics in the above-threshold region22. In this paper, we apply a newly...
Ionic vibrational properties of trap systems present at the silicon-silicon dioxide interface are expected to influence measured data and their interpretation. Similar to the case of deep bulk impurities in semiconductors, these traps require a model, where the eigenenergies of the total defect system...
A new technique to measure the lateral distribution of both interface traps and trapped oxide charge near the drain junction in MOSFET's is presented. This technique derives from the charge pumping method, is easy to implement, and allows ready separation of the interface-trap and oxide charge ...
We report on in-situ surface preparation methods prior to atomic layer deposition (ALD) of gate dielectrics on In0.53Ga0.47As, and investigate their influence on the ability to scale the equivalent oxide thickness (EOT) and to reduce interface trap densities (D-it). The surface treatments emplo...