网络释义 1. 介面电荷 ...ility)来的严重,论文中也找出其形成机制主要是介面电荷(interface trapped charges)所造成,并推导其寿命方程式。 etds.ntut.edu.tw|基于13个网页
1)interface-trapped charge界面陷阱电荷 1.Based on theoretical analysis,the errors of threshold voltage and drain current of SiC-based MOSFET coming from approximate calculation ofinterface-trapped chargewere investigated.因此,近似计算SiO2/SiC界面陷阱电荷不尽合理,应利用电子在界面态上的分布函数进行准确计算。
Although the effect of oxide charges on the threshold voltage shift in MOS devices is dominant, accurate estimation requires for modeling of the interface trapped charge effect. In this work, the effect of interface trapped charge on threshold voltage shift in an N-channel MOS transistor device,...
. 服务器状态- OnlineOur服务器当前是网上的。 任何时侯注册和戏剧!。[translate] aradioactive 放射性[translate] aBecause (100)-oriented silicon has lower (~ one tenth) interface-trapped charge and 由于(100) -针对的硅有更低(~十分之一)接口设陷井的充电和[translate]...
Nebojsa Jankovic, Tatjana Pesic-Brdjanin, "SPICE modeling of oxide and interface trapped charge effects in fully-depleted double-gate FinFETs", Springer Journal of Computational Electronics, vol. 14, no. 3, pp. 844-851, 2015.N. Jankovic , T. Pesic-Brdjanin, "Spice modeling of oxide and ...
take charge of的翻译中文意思-在线英汉词典 ... intake charge 进气, 充气 interface charge 界面电荷 interim charges 临时费 ... www.chinabaike.com|基于14个网页 2. 界面态电荷 界面态电荷,inter... ... ) interface-trapped charge 界面陷阱电荷 ) interface charge 界面态电荷 ) interface charge 界面电...
A simple new method based on the measurement of charge pumping technique is proposed to separate and quantify experimentally the effects of oxide-trapped charges and interface-trapped charges on threshold voltage degradation in p-channel metal-oxide-semi
An effective approach to separating the effects of oxide-trapped charge and interface-trapped charge on mobility degradation in irradiated MOSFETs is demonstrated. It is based on analyzing mobility data sets that have different functional relationships between the radiation-induced-oxide-trapped charge and...
Pointeur vers un GUID qui identifie l’interface demandée. Si le pilote miniport ne prend pas en charge l’InterfaceType spécifié, il doit échouer l’appel et retourner immédiatement.Le parent génère ce GUID avec uuidgen.exe. Pour plus d’informations, consultez Définition et exportation...
Density of trapped electrons The total density of trapped charge with response times longer than τmin at a given gate voltage VG can be calculated as: NTrapped(τmin)=∑0VGΔNtrapped(τmin) (3) It is clear from the results shown in Fig. 5a, c that higher values of NTrapped were ...