空間缺陷分佈 Charge PumpingStaged Trap GenerationSpatial Trap Distribution為了滿足ITRS元件持續縮小化的要求,一般廣泛的認為高介電係數材料將取代原本的二氧化矽成為金氧半元件閘極介電層來改善漏電流的問題,然而在材料替換的過程中,許多問題產生,如電荷捕獲(charge trapping),臨界電壓(threshold voltage)飄移,載子遷移...
摘要 A recently proposed charge pumping technique for characterising the Si/SiO/sub 2/ interface in power MOSFETs is applied to investigating the interface-trap behaviour during the thermal annealing of /spl gamma/-ray irradiated power VDMOSFETs. A comparison with results obtained by the midgap tec...
A new third‐level charge pumping method for accurate determination of interface‐trap parameters in metal‐oxide‐semiconductor field‐effect‐transistors Balland "A new three-level charge pumping method for accurate determination of interface-trap parameters in metal-oxide-semiconductor field-effect ......
(SOI)devices.Thedensityofinterfacetrapsisdescribed as[1]: D it = I cp qAf∆E ,(1) where:I cp –measuredcharge-pumpingcurrent,q–ele- mentarycharge,A–gatearea,f–gatesignalfrequency, ∆E–energyrangeoftrapsparticipatingincharge-pumping. ...
A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFET's using a novel charge pumping technique A comprehensivestudy of hot-carrier induced interface and oxide trap distri-bution in MOSFET’’s using a novel charge pumping tech-nique. Mahapatra S,... S Maha...
Silva-Martinez, Senior Member, IEEE Abstract~Single-ended and differential operational transcon-ductance amplifier (OTA) configurations are biased with MOSFET interface-trap charge-pumping (ITCP) current generators to achieve very low transconductances for tunable sub-hertz operational transconductance ...
This allows the Si-SiO2 interface trap density to be extracted from the slope of these edges. These results are discussed with regard to the other ways these edges have been interpreted. 展开 关键词: interface defect spectroscopy Charge pumping (CP Si-SiO2 interface traps CP curves edges ...
A numerical analysis of the charge-pumping experiment in thin-film SOI pin -diodes is presented. The approach is based on the self-consistent two-dimensional numerical solution of the time-dependent semiconductor equations including the interface trap dynamic equations, which are solved for interface ...
A new technique to measure the lateral distribution of both interface traps and trapped oxide charge near the drain junction in MOSFET's is presented. This technique derives from the charge pumping method, is easy to implement, and allows ready separation of the interface-trap and oxide charge ...
By fitting ln (N (tbaselevel=2.5μs)-N (tbaselevel))-Δtbaselevelat different temperatures and computing the equation t=τ0exp (αe,SiO2dSiO2+αe,HfO2dHfO2,trap), results show that these extra traps measured by the charge pumping technique at high voltage can be attributed to high-k ...