We investigated transient amplitude and phase response ofGaN-on-sapphire SAW delay-line device subjected to pulsed sub-band UV illumination. We correlated these results with photoluminescence measurements in twoGaNsamples with the same emission spectra but different carrier lifetime. The SAW response ...
The InGaN multi-quantum-well (MQW)-structure laser diode (LD) was grown on an epitaxially laterally overgrown GaN on sapphire. The lowest threshold current densities between 1.2 and 2.8 kA cm 2 were obtained when the number of InGaN well layer was 2. The LDs showed an output power as high...
PAM-XIAMEN's Template Products consist of crystalline layers of (gallium nitride)GaN templates, (aluminum nitride)AlN template,(aluminum gallium nitride) AlGaN templates and (indium gallium nitride) InGaN templates, which are deposited on sapphire
This paper aims to investigate the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different symmetry. The GaN epitaxial layers grown on the hexagonal lattice arrangement PSS (HLAPSS) have a lower compressive strain than the...
A gate-recessed AlGaN/GaN high electron mobility transistor(HEMT) on sapphire substrate having fmax of 200 GHz is reported.The gate-recessed device with a T-shaped gate exhibits a maximum drain current density of 1.1 A/mm,and a peak value of 421 mS/mm for extrinsic transconductance with mini...
A novel AlGaN/GaN/InGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) structure with an AlN interlayer on sapphire substrate has ... Jian,Tang,Xiaoliang,... - 《Physica Status Solidi》 被引量: 27发表: 2008年 最大振荡频率为200GHz的蓝宝石衬底AlGaN/GaN HEMT 报道了最...
The In xGa 1-x N/GaN films were grown on (0001) sapphire substrates by metal organic chemical vapor deposit (MOCVD) using a homemade vertical reactor at atmospheric pressure. The properties of In xGa 1-x N layers, such as their chemical component, thickness, the crystalline quality, and ...
aThe InGaN films were deposited on the commercial (0001) p-GaN wafers on sapphire substrates by radiofrequency plasma-assisted MBE (SVTA35-V-2). 7 N Ga and 6 N In were used as the source materials. 6 N nitrogen was further purified through a gas purifier and then introduced into a ...
High-quality GaN and GaInN (x≤0.2) have been grown by RF-plasma-assisted molecular beam epitaxy (RF-MBE) on the GaN/AlN/sapphire substrate grown by metalo... H Sakai,T Koide,H Suzuki,... - 《Japanese Journal of Applied Physics Pt Letters》 被引量: 205发表: 1995年 Cubic InGaN/GaN...
InGaN/GaN quantum wells (QWs) were grown by molecular-beam epitaxy onc-plane sapphire substrates. The growth of InGaN is carried out at550 °Cwith a large V/III ratio to counteract the low efficiency ofNH3at that temperature and to promote the two-dimensional mode of growth. An In compo...