1.3-μm InAs_GaAs量子点激光器的材料外延和工艺设计.pdf,摘要 摘要 随着光纤通讯和高速信息化的发展,作为光纤通信的光源,对半导体激光 器的性能要求越来越高。因为半导体量子点独有的材料特性,国内外将目光聚 焦到了高性能量子点激光器的研发和产业化。目前大多通信波段
Before intro- duction to the UHV system, a (1 0 0)GaAs substrate surface was chemical-etched to form a matrix of 30 m-wide square mesas. In the UHV system, the mesa top of the sample was used to form the follow- ing novel structures; an STM tip-assisted nano-scale deposits, ...
study。 2 CHAPTERONE:Introduetion Furthermore,thestudy alsotracedthosecommon thinking’S atthe politicallevel,China andTanzaniathathave always sharedsimilarviews,takencommon positions and supported eachotherattheinternational arena.Howeverthestudy reflectedthe period ofdecolonizationof AfricaChina stood firmly ...