The present disclosure relates to in-memory computing using a static random access memory (SRAM). In particular, the present disclosure relates to a structure including a memory configured to store a first word and a second word, the memory further includes a configurable data path circuit, and...
展开 关键词: Random access memory Spiking neural networks In-memory computing Hardware Timing Complexity theory Transistors 会议名称: 2024 IEEE 6th International Conference on AI Circuits and Systems (AICAS) 主办单位: IEEE 收藏 引用 批量引用 报错 分享 全部...
Computing systemsWith the development of artificial intelligence (AI), data intensive algorithms, like Deep Neural Networks (DNNs), need power-consumed less but faster edge processors. In-Memory-Computing (IMC) is a promising candidate to break through von Neumann bottleneck. SRAM-based IMC provides...
isscc2023 v07 SRAM computing in memoryFu**g浪 上传10.25MB 文件格式 pdf isscc isscc2023 v07 SRAM computing in memory 点赞(0) 踩踩(0) 反馈 所需:1 积分 电信网络下载 type 和 interface 区别 2025-02-14 21:02:08 积分:1 crack资源(这玩意还要不少于11字) 2025-02-13 20:11:26 积分:1 ...
In the world of computing, SRAM, or Static RAM, and DRAM, or Dynamic RAM, are two significant types of RAM. These two varieties possess distinct characteristics and cater to specific applications in the vast domain of computer technology. You will also get to know SRAM and DRAM full ...
vector-scalar computing pattern. The novelties of the VSPIM can be concluded as follows: 1) support bit-serial based scalar-vector computing via ingenious parallel bit-broadcasting; 2) refine the GEMM mapping strategy and computing pattern to enhance performance an...
Minimum-energy-driven circuit design is highly required in numerous emerging applications such as mobile electronics, wireless sensor nodes, implantable biomedical devices, etc. Due to high computing capability requirements in such applications, SRAMs play a critical role in energy consumption. This paper...
As a new type of computer architecture, computing-in-memory is an alternative approach to alleviate the von Neumann bottleneck. Here, we have demonstrated two kinds of computing-in-memory designs based on two-surface-channel MoS2 transistors: symmetrical 4T2R Static Random-Access Memory (SRAM) ...
How do you design silicon for what’s coming in the future from the world of data science? There’s a lot of opportunity there in terms of next-generation integration of layers. The skill sets of these people are dramatically different. Think about how many people on LinkedIn have a back...
An Energy-Efficient Computing-in-Memory (CiM) cell design utilizing a Negative Capacitance (NC) FET has been proposed to support computing architectures for Deep Neural Networks (DNNs). The NCFET device characteristics for CiM architectures have been studied to determine an optimal device performance...