Degradation of the diode ideality factor of silicon n-p junctions. Solar Energy Materials & Solar Cells 62 (2000) 393-98M. El-Tahchi, A. Khoury, M. De Labardonnie, P. Mialhe and F. Pelanchon, "Degradation of the diode ideality factor of silicon n-p junctions," Solar Energy Mat....
Φ b value for the Sn/n-Si SBDs with the interfacial oxide layer (metal–interfacial layer–semiconductor (MIS) sample) has ranged from 0.647 to 0.560 eV, and ideality factor n value from 1.381 to 2.777. Among identically prepared diodes, higher ideality factors have been found to accompany ...
The role of thermally assisted tunneling in highly doped anisotype heterojunctions is investigated by a method involving the measurement of temperature dependence of ideality factor β when this is significantly different from unity. First of all a straightforward computational method for obtaining theoretic...
The possible implications of such variability are discussed, in particular the need for a new ECT calculation procedure as well as for revision of some PV performance models. 展开 关键词: equivalent cell temperature photovoltaic modules crystalline silicon current-voltage characteristics ideality factor ...
we show a low dependence of the open-circuit voltage on the temperature of a MAPbI3minimodule that allows a high-throughput outdoor analysis based on the ideality factor (nID). Accordingly, three representative power loss tendencies obtained fromI–Vcurves measured with standard procedures are com...
The ideality factor value of silicon n + p solar cells with iron contaminants has been studied by means of computer simulation. The iron concentration range of 1 0 10 1 0 13 cm3, base doping level range of 1 0 15 1 0 17 cm3, and temperature range of 290 340 K were used in the ...
The most important and accessible methods to determine the series resistance Rs and the ideality factor of the diode, m, for the solar cell are presented in this paper. The values of the two parameters obtained for a monocrystalline silicon solar cell with an area of 9cm2 are also presented...
High-quality heterojunction diodes with near-unity ideality factor were fabricated by direct deposition of a (n(+)) nanocrystalline silicon film on top of fine-grained (p) multicrystalline silicon substrates. A very good ideality factor of 1.08 was achieved using a single-diode model in the ...
The diode ideality factor increases with LaCl 3 concentration and decreases with annealing temperature. Therefore, by changing the LaCl 3 concentration and annealing temperature quality of the LaF 3 layer on PS can be optimized. It was also seen that the Ag/LaF 3 /PS/Si/Ag structure showed ...
In this contribution, we show that the dominant electroluminescent emission of hydrogenated amorphous silicon (a-Si:H) thin-film solar cells follows a diode law, whose radiative ideality factornris larger than one. This is in contrast to crystalline silicon and Cu(In, Ga)Se2solar cells for ...