Mario El-Tahchi,Antonio Khoury,Marc De Labardonnie, et al.Degradation of the diode ideality factor of silicon n-p junctions. Solar Energy Materials . 2000Mario El-Tahchi, Antonio Khoury, Marc De Labardonnie, et al. Degradation of the Diode Ideality Factor of Silicon n-p Junctions [J]....
I–V curve for fill factor. (4.9)FF=Imax×VmaxIsc×Voc Example 4.1 A 100 cm2 silicon solar cell operating at standard test conditions (STC) is giving 2.5 A short-circuit current. From the data sheet it was observed that the maximum voltage and maximum current were 0.6 V and 2.1 A. ...
et al. Numerical analysis to determine reliable one-diode model parameters for perovskite solar cells. Energies 11, 1963 (2018). Article Google Scholar Agarwal, S. et al. On the uniqueness of ideality factor and voltage exponent of perovskite-based solar cells. J. Phys. Chem. Lett. 5, ...
The diode ideality factor increases with LaCl3 concentration and decreases with annealing temperature. Therefore, by changing the LaCl3 concentration and annealing temperature quality of the LaF3 layer on PS can be optimized. It was also seen that the Ag/LaF3/PS/Si/Ag structure showed the ...
The most important and accessible methods to determine the series resistance Rs and the ideality factor of the diode, m, for the solar cell are presented in this paper. The values of the two parameters obtained for a monocrystalline silicon solar cell with an area of 9cm2 are also presented...
The diode ideality factor increases with LaCl3 concentration and decreases with annealing temperature. Therefore, by changing the LaCl3 concentration and annealing temperature quality of the LaF3 layer on PS can be optimized. It was also seen that the Ag/LaF3/PS/Si/Ag structure showed the ...
High-quality heterojunction diodes with near-unity ideality factor were fabricated by direct deposition of a (n(+)) nanocrystalline silicon film on top of fine-grained (p) multicrystalline silicon substrates. A very good ideality factor of 1.08 was achieved using a single-diode model in the ...
While efficiency is commonly understood to be impacted by the silicon bulk lifetime (at the maximum power point injection level), this work demonstrates the wide ranging impacts of ILD lifetime on the Voc, the fill factor (FF), the diode ideality factor m, and the dim light response. ...
In this contribution, we show that the dominant electroluminescent emission of hydrogenated amorphous silicon (a-Si:H) thin-film solar cells follows a diode law, whose radiative ideality factornris larger than one. This is in contrast to crystalline silicon and Cu(In, Ga)Se2solar cells for ...
The ideality factor value of silicon n + p solar cells with iron contaminants has been studied by means of computer simulation. The iron concentration range of 1 0 10 1 0 13 cm3, base doping level range of 1 0 15 1 0 17 cm3, and temperature range of 290 340 K were used in the ...