SiliconA study of the effects on the values of the solar cell ideality factor of doping density, interface recombination velocity, base width, traps distribution and energy level are analysed. The ideality factor is extracted from a description of the simulated current voltage characteristics of the...
The most important output characteristics of solar cells, fill factor and efficiency strongly depend on fundamental physical properties of semiconductor materials, such as mobility, lifetime of charge carriers, diffusion length, as well as on the type of transport processes in the device. Ideality fac...
The SBH Φ b for the Sn/n-Si SBDs without the interfacial oxide layer (the reference sample) has ranged from 0.670 to 0.599 eV, and ideality factor n from 1.349 to 2.558. Φ b value for the Sn/n-Si SBDs with the interfacial oxide layer (metal–interfacial layer–semiconductor (MIS) ...
The role of thermally assisted tunneling in highly doped anisotype heterojunctions is investigated by a method involving the measurement of temperature dependence of ideality factor β when this is significantly different from unity. First of all a straightforward computational method for obtaining theoretic...
The possible implications of such variability are discussed, in particular the need for a new ECT calculation procedure as well as for revision of some PV performance models. 展开 关键词: equivalent cell temperature photovoltaic modules crystalline silicon current-voltage characteristics ideality factor ...
Velilla, E. et al. Numerical analysis to determine reliable one-diode model parameters for perovskite solar cells.Energies11, 1963 (2018). ArticleGoogle Scholar Agarwal, S. et al. On the uniqueness of ideality factor and voltage exponent of perovskite-based solar cells.J. Phys. Chem. Lett.5...
To compare the change of mobility as a function of VGS in the saturation region, the mobility variation factor, defined as the ratio of peak mobility over the mobility at VGS = −30V, for the OPTs with different channel layers were plotted in the inset of Figure 2B. The variation in ...
Mario El-Tahchi,Antonio Khoury,Marc De Labardonnie, et al.Degradation of the diode ideality factor of silicon n-p junctions. Solar Energy Materials . 2000Mario El-Tahchi, Antonio Khoury, Marc De Labardonnie, et al. Degradation of the Diode Ideality Factor of Silicon n-p Junctions [J]....
SiliconSpace chargeThe recombination of the neutral regions of the solar cell is well modeled by means of an exponential term with ideality factor close to 1 in the low injection regime but non ideal performances evidenced in the I-V characteristic curves lead to diverse theories to e...
graphene–silicon devicesideality factorinterface statequantum capacitanceUndoubtedly graphene–silicon (GS) heterostructure devices will play significant roles as future rectifiers, potential barrier modulators, photodetectors, photovoltaic devices, biochemical sensors, and so on. However, typical GS devices ...