metal gateinterface dipoleMOS stackeffective work functionAlthough metal gate/high-k stacks are commonly used in metal-oxide-semiconductor field-effect-transistors (MOSFETs) in the 45 nm technology node and beyond, there are still many challenges to be solved. Among the various technologies to ...
現在尚處於由 polycide 構造轉 FSG 等層間絕緣膜為4 左右的介電率,各半導 移至 poly metal 構造的過渡期。金屬閘極技術 體公司皆計劃在 2005 年之前做到 1.5 以㆘, 可能與 high-k 絕緣膜組合起來達到實用的目 若介電率在 2.0 以㆘,將變成多孔質材料而使 的。 強度㆘降。 金屬閘極尚有㆘列等...
The mechanism of gate threshold voltage (VT) shifts observed in high κ/metal gate stacks is investigated by a density functional theory. This finds that VT depends on the band alignments and the chemical trends between the component oxide layers, such as HfO2, SrO, La2O3, Al2O3, and Si...
Two-dimensional (2D) layered semiconductors, with an atomic thickness that allows superior gate-field penetration, are of interest as channel materials for future transistors2,3. However, the integration of high-dielectric-constant (κ) materials with 2D materials, while scaling their capacitance ...
Most notably, adjusting the gate spacer, one can can regulate the effects of diverging dielectric constant near the metal- and superconductor-insulator transitions2. Addressing the technological applications, we envision a wide use of gate controlled electrostatic screening in the high-κ films-based ...
Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k/SiO2 interface We have examined an origin of the flatband voltage(VFB)shift in metal-oxide-semiconductor capacitors by employing bilayer high-kgate dielectrics...
Negative capacitance FETs (NC-FETs)5,6,7 use the dipole effect in ferroelectric material as the gate oxide layer to effectively reduce the gate voltage. However, the ferroelectric material is prone to polarization in the electric field, which restricts the low SS operation only in low-speed ...
Recent advances of solution-processed metal oxide thin-film transistors ACS Appl. Mater. Interfaces, 10 (2018), pp. 25878-25901 CrossrefView in ScopusGoogle Scholar [22] S.Y. Yang, K. Shin, C.E. Park The effect of gate-dielectric surface energy on pentacene morphology and organic field-...
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& Majumdar, K. Gate-tunable trion switch for excitonic device applications. Phys. Rev. B 101, 081413 (2020). Article ADS CAS Google Scholar Lin, J. D. et al. Electron-doping-enhanced trion formation in monolayer molybdenum disulfide functionalized with cesium carbonate. ACS Nano 8, 5323–...