metal gateinterface dipoleMOS stackeffective work functionAlthough metal gate/high-k stacks are commonly used in metal-oxide-semiconductor field-effect-transistors (MOSFETs) in the 45 nm technology node and beyond, there are still many challenges to be solved. Among the various technologies to ...
An interface dipole model explaining threshold voltage(Vt)tuning in HfSiON gatedn-channel field effect transistors(nFETs)is proposed.Vttuning depends on rare earth (RE) type and diffusion inSi∕SiOx∕HfSiON∕REOx/metal gatednFETsas follows:Sr<Er<Sc+Er<La<Sc<none. ThisVtordering is very simi...
現在尚處於由 polycide 構造轉 FSG 等層間絕緣膜為4 左右的介電率,各半導 移至 poly metal 構造的過渡期。金屬閘極技術 體公司皆計劃在 2005 年之前做到 1.5 以㆘, 可能與 high-k 絕緣膜組合起來達到實用的目 若介電率在 2.0 以㆘,將變成多孔質材料而使 的。 強度㆘降。 金屬閘極尚有㆘列等...
The mechanism of these voltage shifts has been attributed to a dipole at the high K/SiO_2 interface that is correlated to differences in the group electronegativity between the capping and high-k layers and correlated to band bending in the Si channel (4-7).TEL Technology Center, America, ...
摘要 For the first time, the performance impact of (110) silicon substrates on high-k + metal gate strained 45 nm node NMO... 出版源 IEEE , 2009 关键词 MOSFET / elemental semiconductors / semiconductor device reliability / silicon / 110) silicon substrates / 2D short channel effects / ...
The mechanism of gate threshold voltage (VT) shifts observed in high κ/metal gate stacks is investigated by a density functional theory. This finds that VT depends on the band alignments and the chemical trends between the component oxide layers, such as HfO2, SrO, La2O3, Al2O3, and Si...
Introduction332.2High–kDielectrics332.3MetalGates402.4IntegrationofHigh–kGateDielectricswithAlternativeChannelMaterials452.5Summary51References523UVEngineeringofHigh–kThinFilms61IanW.Boyd3.1Introduction613.2GasDischargeGenerationofUV(Excimer)Radiation613.3ExcimerLampSourcesBasedonSilentDischarges633.4PredepositionSurface...
Interface dipole engineering in metal gate/high-k stacks Although metal gate/high-k stacks are commonly used in metal-oxide-semiconductor field-effect-transistors (MOSFETs) in the 45 nm technology node and beyond... AP Huang,XH Zheng,ZS Xiao,... - 《Chinese Science Bulletin》 被引量: 8发表...
Change in the work function (WF) of the gate electrode material caused by the contact with Hf-based high-kgate dielectrics was investigated by means of the flat-band voltage(Vfb)shift in capacitance-voltage curves, and the interface dipole, which modifies the WF, was characterized by x-ray ...
Ultraflat single-crystal hexagonal boron nitride for wafer-scale integration of a 2D-compatible high-κ metal gate Yani Wang Chao Zhao Hailin Peng Nature Materials (2024) Integrated 2D multi-fin field-effect transistors Mengshi Yu Congwei Tan Hailin Peng Nature Communications (2024) A printed...