“The dependence of etch rate of photo CVD silicon nitride films on NH4F content in buffered HF” Microelectronics Journal vol. 26, No. 6, p. 563-567 (Sep. 1995).(abstract).*V.K. Rathi, et al. " The dependence of etch rate of photo CVD silicon nitride films on NH4F content in ...
It is possible that this increase in etch rate is caused by the tensile strain induced upon the AlAs layer in the WI-ELO setup. In order to verify this assumption, planar AlAs layers, subjected to a controlled curvature, were etched in HF solutions and their etch duration was measured. ...
the etch rate of metals. Drying of released wet etched structures however causes problems of stiction. Although solutions exist to overcome these problems, it is also possible to circumvent stiction by using an HF vapor release etch. Especially when the wafer temperature during the release is raise...
SEM observations and etch rate ... C Chartier,S Bastide,C Lévy-Clément - 《Electrochimica Acta》 被引量: 530发表: 2008年 Porous silicon antireflection layer for solar cells using metal-assisted chemical etching Porous silicon antireflection coatings were generated on fully processed screen-printed ...
The pH-dependence of R, the etch rate of n-Si( 11 l), is shown in Fig. Sa. At pH 14 the solution was 2 M NaOH. 10M NH,F solutions were used at intermediate pH. Etch rates at pH < 3 are taken from the paper of Hu and Kerr[21]. The rate R, of the electrochemical ...
(显影) 曝光光带 PS 搭载 glass 进行曝光 动画演示 曝光机的功能以及硬件实现 Etch Etch Rate Requirement Items Uniformity Selectivity Profile CD Bias Requirement Items of Wet Etch FICD Size Glass SUBSTRATE FILM DICD Size PHOTOTESIST CD BIAS = | DICD – FICD | 说明:1、CD: Critical Dimension DI...
the etch rate of HfSiON annealed at 900鈩僨or 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions.After the HfSiON film has been completely removed by HF-based solutions,it is not possible to etch the interfacial layer and the etched surface does not have...
substrate before and after electrochemical etching show that this procedure does not remove bulk Si. This property of the electrochemical etch makes it ide... TR Guilinger,MJ Kelly,JW Medernach,... - Sos/soi Technology Conference 被引量: 1发表: 1989年 Evaluation method of semiconductor device,...
However, etch-stop was observed at the depth of 1.5 m after 15 min. I found that the flow rate of HF gas and a high-pressure process were very effective with regard to this issue. When the flow rate of HF gas was increased to 4300 sccm, etching never stopped over 40 min and 20 ...
the etch rate of HfSiON annealed at 900鈩僨or 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions.After the HfSiON film has been completely removed by HF-based solutions,it is not possible to etch the interfacial layer and the etched surface does not have...