capacitance and MOSFETThe scaling of complementary metal oxidesemiconductor (CMOS) transistors has led to the silicondioxide layer used as a gate dielectric becoming so thin (1.4nm) that its leakage current is too large. It is necessary toreplace the SiO2 with a physically thicker layer of ...
In this paper, we present an analytical closed model for the gate to source/drain fringing capacitance (C f ) of nanoscale metal oxide semiconductor field effect transistors (MOSFETs), with the consideration of layout dependent effects and process fluctuations. A kind of field-poly structure on ...
Effect of gate-to-drain and drain-to-source parasitic capacitances of MOSFET on the performance of Class-E/F-3 power amplifier A. Sheikhi, et al.: "Effect of gate-to-drain and drain-to-source parasitic capacitances of MOSFET on the performance of class-E/F3 power amplifier,......
The error due to dissipation factor can be more effectively reduced by this method, compared to the conventional C– V measurements. Successful extraction of gate capacitance from test transistors with designed test pads has been demonstrated.
International Journal of Electrical & Computer EngineeringMd. Alamgir Hossain, Arif Mahmud, Mahfuzul Haque Chowdhury, and Md. Mijanur Rahman, "Capacitance- Voltage Characteristics of Nanowire Trigate MOSFET Considering Wave Function Penetration", International Journal of Electrical and Computer Engineering ...
Recent studies show that the gate sidewall capacitance of an underlap double gate device plays an important role in the design and optimization of the device. To date, only semiempirical techniques are used to model this important capacitance. In this brief, the authors present an analytical model...
In this paper, a semi-analytical model for the gate-to-source/drain fringing capacitance (Cf) of MOSFET including process variations is presented. Cf is defined as a layout-dependent parasitic capacitance separated from gate-to-contact capacitance (Cco), and is composed of several dual-k perpend...
doi:US5121176 AFred L. QuiggUSUS5121176 * 1991年4月19日 1992年6月9日 Quigg Fred L MOSFET structure having reduced gate capacitance
An analytical model of fringing capacitances for deep-submicron MOSFET with high- k gate dielectric, including gate dielectric fringing-capacitance and gate electrode fringing-capacitance, is obtained by the conformal-mapping transformation method. It is demonstrated that the fringing-capacitance effect is...
High di/dt and dv/dt of SiC MOSFET cause a considerable amount of overshoot in device voltage and current during switching transients in the presence of inverter layout parasitic inductance and load parasitic capacitance. The excessive overshoots in device voltage and current cause failure of the ...