capacitance and MOSFETThe scaling of complementary metal oxidesemiconductor (CMOS) transistors has led to the silicondioxide layer used as a gate dielectric becoming so thin (1.4nm) that its leakage current is too large. It is necessary toreplace the SiO2 with a physically thicker layer of ...
It is shown that neglecting the gate-drain capacitance of the MOSFET would lead to an overestimation of the optimum device width in the CMOS source degenerated LNA. 本文证明了在CMOS源端degeneration结构的低噪声放大器中,忽略场效应管的栅漏电容将造成对放大管的最优栅宽估计过大。 3. Simulation res...
Scaling effects on the gate capacitance of trigate MOS field-effect transistors are studied by means of analytical models and numerical self-consistent solutions of the 2-D Schrodinger and Poisson equations. Special attention is paid to the quantum capacitance, which is related to the density of ...
The error due to dissipation factor can be more effectively reduced by this method, compared to the conventional C– V measurements. Successful extraction of gate capacitance from test transistors with designed test pads has been demonstrated.
International Journal of Electrical & Computer EngineeringMd. Alamgir Hossain, Arif Mahmud, Mahfuzul Haque Chowdhury, and Md. Mijanur Rahman, "Capacitance- Voltage Characteristics of Nanowire Trigate MOSFET Considering Wave Function Penetration", International Journal of Electrical and Computer Engineering ...
Recent studies show that the gate sidewall capacitance of an underlap double gate device plays an important role in the design and optimization of the device. To date, only semiempirical techniques are used to model this important capacitance. In this brief, the authors present an analytical model...
In this particular embodiment, since the dielectric thickness between the upper gate portion and the drain is relatively large, the MOSFET exhibits a lower gate-drain capacitance (C. sub.GD) value, while the threshold voltage of the MOSFET remains relatively unchanged. The upper gate portion may...
第8章MOSFET的短沟道效应 MOSFET的沟道长度小于3um时发生的 b...b 热度: Metal Gate High-k Reliability:金属栅极的高可靠性 热度: Impactofintra-diethermalvariationonaccurate MOSFETgate-lengthmeasurement IshtiaqAhsan 1 ,Dieter.K.Schroder 2 ,EdwardNowak ...
In this paper, we present an analytical closed model for the gate to source/drain fringing capacitance (C f ) of nanoscale metal oxide semiconductor field effect transistors (MOSFETs), with the consideration of layout dependent effects and process fluctuations. A kind of field-poly structure on ...
专利名称:Gate-source protective circuit for a power MOSFET 发明人:Ludwig Leipold,Jenoe Tihanyi,Roland Weber,Rainald Sander 申请号:US07/382523 申请日:19890720 公开号:US05172290A 公开日:19921215 摘要:The gate-source capacitance of a power MOSFET (1) can be protected against positive and negative...